- Manufacture :
- Vgs - Gate-Source Voltage :
- Mounting Style :
- Package / Case :
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
2 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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404
In-stock
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STMicroelectronics | MOSFET 1200V silicon carbide MOSFET | - 10 V, + 25 V | Through Hole | HiP247-3 | - 55 C | + 200 C | Tube | 1 Channel | SiC | N-Channel | 1.2 kV | 20 A | 215 mOhms | 2 V | 45 nC | Enhancement | |||
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90
In-stock
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IXYS | MOSFET SiC Power MOSFET | - 5 V to + 20 V | Chassis Mount | SOT-227-4 | - 40 C | + 150 C | Tube | 1 Channel | SiC | N-Channel | 1.2 kV | 68 A | 25 mOhms | 2 V | 161 nC | Enhancement |
