- Manufacture :
- Mounting Style :
- Package / Case :
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Packaging :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
6 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Pd - Power Dissipation | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Fall Time | Package | Typical Turn-Off Delay Time | Typical Turn-On Delay Time | RoHS | |
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86,200
In-stock
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Toshiba | MOSFET Pb-F POWER MOSFET TRANSISTOR DOSP-ADV... | 20 V | + 150 C | Tape & Reel (TR) | 142 W | N-Channel | 75 V | 170 A | 2.5 mOhms | 2 V | 72 nC | 15 ns | QFN-8 | 56 ns | 30 ns | 100% Green available | |||||||||
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61
In-stock
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IXYS | MOSFET 230 Amps 75V | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 75 V | 230 A | 4.2 mOhms | 2 V | 178 nC | Enhancement | |||||||||
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174
In-stock
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IR / Infineon | MOSFET TRENCH_MOSFETS | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 75 V | 122 A | 5 mOhms | 2 V | 110 nC | Enhancement | |||||||||
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2,568
In-stock
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Toshiba | MOSFET Power MOSFET N-Channel Single | 20 V | SMD/SMT | SOP-Advance-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 75 V | 150 A | 2.1 mOhms | 2 V | 72 nC | Enhancement | |||||||||
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1,600
In-stock
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IR / Infineon | MOSFET MOSFET 75V D2PAK | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 75 V | 62 A | 10.5 mOhms | 2 V | 130 nC | Enhancement | |||||||||
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VIEW | Nexperia | MOSFET N-channel TrenchMOS intermed level FET | 20 V | SMD/SMT | SOT-23-3 | - 65 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 75 V | 300 mA | 2.8 Ohms | 2 V | Enhancement |
