- Vgs - Gate-Source Voltage :
- Package / Case :
- Maximum Operating Temperature :
- Packaging :
- Qg - Gate Charge :
- Tradename :
6 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Pd - Power Dissipation | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | Package | Factory Pack Quantity | RoHS | |
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GET PRICE |
8,600
In-stock
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STMicroelectronics | MOSFET N-channel 60 V, 0.0012 Ohm typ 120 A STripFET F7 Power M... | - 20 V, + 20 V | Tape & Reel (TR) | 187 W | N-Channel | 60 V | 260 A | 1.2 mOhms | 2 V | 100 nC | PowerFLAT-5x6-8 | 3000 | Green available | ||||||||||
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927
In-stock
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Fairchild Semiconductor | MOSFET TO-leadless, PT8, 40V | 20 V | SMD/SMT | H-PSOF-8 | - 55 C | + 175 C | Reel | Si | N-Channel | 40 V | 240 A | 1.2 mOhms | 2 V | 90 nC | Enhancement | PowerTrench | ||||||||
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1,822
In-stock
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onsemi | MOSFET NFET SO8FL 60V 289A 1.2MO | 20 V | SMD/SMT | SO-FL-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 276 A | 1.2 mOhms | 2 V | 52 nC | |||||||||
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2,956
In-stock
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IR / Infineon | MOSFET AUTO 40V 1 N-CH HEXFET 2.3mOhms | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 320 A | 1.2 mOhms | 2 V | 260 nC | Enhancement | ||||||||
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1,910
In-stock
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Infineon Technologies | MOSFET N-Ch 40V 120A D2PAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 120 A | 1.2 mOhms | 2 V | 250 nC | Enhancement | OptiMOS | |||||||
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VIEW | Infineon Technologies | MOSFET N-Ch 40V 120A D2PAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 120 A | 1.2 mOhms | 2 V | 250 nC | Enhancement | OptiMOS |
