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Packaging :
Vds - Drain-Source Breakdown Voltage :
Id - Continuous Drain Current :
Qg - Gate Charge :
5 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Channel Mode Tradename
IPP320N20N3 G
1+
$2.550
10+
$2.170
100+
$1.740
500+
$1.520
RFQ
1,907
In-stock
Infineon Technologies MOSFET N-Ch 200V 34A TO220-3 OptiMOS 3 20 V Through Hole TO-220-3 - 55 C + 175 C Tube 1 Channel Si N-Channel 200 V 34 A 28 mOhms 2 V 29 nC Enhancement OptiMOS
IPB320N20N3 G
1+
$2.550
10+
$2.170
100+
$1.740
500+
$1.520
1000+
$1.260
RFQ
2,023
In-stock
Infineon Technologies MOSFET N-Ch 200V 34A D2PAK-2 OptiMOS 3 20 V SMD/SMT TO-263-3 - 55 C + 175 C Reel 1 Channel Si N-Channel 200 V 34 A 28 mOhms 2 V 29 nC Enhancement OptiMOS
DMNH10H028SK3Q-13
1+
$1.650
10+
$1.400
100+
$1.120
500+
$0.981
2500+
$0.757
RFQ
2,473
In-stock
Diodes Incorporated MOSFET 100V 175c N-Ch FET 28mOhm 10V 55A 20 V SMD/SMT TO-252-3 - 55 C + 175 C Reel 1 Channel Si N-Channel 100 V 55 A 28 mOhms 2 V 36 nC Enhancement  
IPB320N20N3GATMA1
1+
$2.550
10+
$2.170
100+
$1.740
500+
$1.520
1000+
$1.260
RFQ
770
In-stock
Infineon Technologies MOSFET N-Ch 200V 34A D2PAK-2 OptiMOS 3 20 V SMD/SMT TO-263-3 - 55 C + 175 C Reel 1 Channel Si N-Channel 200 V 34 A 28 mOhms 2 V 29 nC Enhancement OptiMOS
IPP320N20N3GXKSA1
1+
$2.550
10+
$2.170
100+
$1.740
500+
$1.520
RFQ
333
In-stock
Infineon Technologies MOSFET N-Ch 200V 34A TO220-3 OptiMOS 3 20 V Through Hole TO-220-3 - 55 C + 175 C Tube 1 Channel Si N-Channel 200 V 34 A 28 mOhms 2 V 29 nC Enhancement OptiMOS
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