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Packaging :
Vds - Drain-Source Breakdown Voltage :
Id - Continuous Drain Current :
5 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Channel Mode Tradename
IPB083N10N3 G
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RFQ
18,600
In-stock
Infineon Technologies MOSFET N-Ch 100V 80A D2PAK-2 OptiMOS 3 20 V SMD/SMT TO-263-3 - 55 C + 175 C Reel 1 Channel Si N-Channel 100 V 80 A 7.2 mOhms 2 V 55 nC Enhancement OptiMOS
IRF100B202
1+
$1.510
10+
$1.290
100+
$0.993
500+
$0.878
RFQ
331
In-stock
Infineon Technologies MOSFET TRENCH_MOSFETS 20 V Through Hole TO-220-3 - 55 C + 175 C Tube 1 Channel Si N-Channel 100 V 97 A 7.2 mOhms 2 V 116 nC Enhancement StrongIRFET
IPD50N04S408ATMA1
1+
$0.620
10+
$0.515
100+
$0.332
1000+
$0.266
2500+
$0.225
RFQ
1,608
In-stock
Infineon Technologies MOSFET N-Ch 40V 50A DPAK-2 OptiMOS-T2 20 V SMD/SMT TO-252-3 - 55 C + 175 C Reel 1 Channel Si N-Channel 40 V 50 A 7.2 mOhms 2 V 22.4 nC Enhancement  
IPB083N10N3GATMA1
1+
$1.420
10+
$1.210
100+
$0.929
500+
$0.821
1000+
$0.648
RFQ
713
In-stock
Infineon Technologies MOSFET N-Ch 100V 80A D2PAK-2 OptiMOS 3 20 V SMD/SMT TO-263-3 - 55 C + 175 C Reel 1 Channel Si N-Channel 100 V 80 A 7.2 mOhms 2 V 55 nC Enhancement OptiMOS
IPD50N04S4-08
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RFQ
9,200
In-stock
Infineon Technologies MOSFET N-Ch 40V 50A DPAK-2 OptiMOS-T2 20 V SMD/SMT TO-252-3 - 55 C + 175 C Reel 1 Channel Si N-Channel 40 V 50 A 7.2 mOhms 2 V 22.4 nC Enhancement OptiMOS
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