PART NO.	PRICE		STOCK	MANUFACTURE	DESCRIPTION	Vgs - Gate-Source Voltage	Mounting Style	Package / Case	Minimum Operating Temperature	Maximum Operating Temperature	Packaging	Number of Channels	Technology	Transistor Polarity	Vds - Drain-Source Breakdown Voltage	Id - Continuous Drain Current	Rds On - Drain-Source Resistance	Vgs th - Gate-Source Threshold Voltage	Qg - Gate Charge	Channel Mode	Tradename
BSC110N06NS3 G	1+ $0.860 10+ $0.707 100+ $0.456 1000+ $0.365 5000+ $0.308	PDF RFQ	4,703 In-stock	Infineon Technologies	MOSFET N-Ch 60V 50A TDSON-8 OptiMOS 3	20 V	SMD/SMT	TDSON-8	- 55 C	+ 150 C	Reel	1 Channel	Si	N-Channel	60 V	50 A	9 mOhms	2 V	33 nC	Enhancement	OptiMOS
STW27N60M2-EP	1+ $5.170 10+ $4.390 100+ $3.810 250+ $3.610	PDF RFQ	270 In-stock	STMicroelectronics	MOSFET N-channel 600 V, 0.150 Ohm typ., 20 A MDmesh M2 EP Power ...	25 V	Through Hole	TO-247-3	- 55 C	+ 150 C		1 Channel	Si	N-Channel	600 V	20 A	163 mOhms	2 V	33 nC	Enhancement
STP27N60M2-EP	1+ $4.000 10+ $4.000 100+ $3.000 250+ $3.000	PDF RFQ	254 In-stock	STMicroelectronics	MOSFET N-channel 600 V, 0.150 Ohm typ., 20 A MDmesh M2 EP Power ...	25 V	Through Hole	TO-220-3	- 55 C	+ 150 C		1 Channel	Si	N-Channel	600 V	20 A	163 mOhms	2 V	33 nC	Enhancement
STF27N60M2-EP	1+ $2.920 10+ $2.480 100+ $2.150 250+ $2.040	PDF RFQ	307 In-stock	STMicroelectronics	MOSFET N-channel 600 V, 0.150 Ohm typ., 20 A MDmesh M2 EP Power ...	25 V	Through Hole	TO-220FP-3	- 55 C	+ 150 C		1 Channel	Si	N-Channel	600 V	20 A	163 mOhms	2 V	33 nC	Enhancement
BSC110N06NS3GATMA1	1+ $0.860 10+ $0.707 100+ $0.456 1000+ $0.365 5000+ $0.308	PDF RFQ	70 In-stock	Infineon Technologies	MOSFET N-Ch 60V 50A TDSON-8 OptiMOS 3	20 V	SMD/SMT	TDSON-8	- 55 C	+ 150 C	Reel	1 Channel	Si	N-Channel	60 V	50 A	9 mOhms	2 V	33 nC	Enhancement	OptiMOS