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Vds - Drain-Source Breakdown Voltage :
Id - Continuous Drain Current :
Rds On - Drain-Source Resistance :
Qg - Gate Charge :
3 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Channel Mode
STW56N60M2-4
1+
$7.440
10+
$6.730
25+
$6.410
100+
$5.570
RFQ
598
In-stock
STMicroelectronics MOSFET POWER MOSFET 25 V Through Hole TO-247-4   + 150 C Tube 1 Channel Si N-Channel 600 V 52 A 45 mOhms 2 V 91 nC Enhancement
STW48N60M2-4
1+
$9.230
10+
$8.350
25+
$7.960
100+
$6.910
RFQ
170
In-stock
STMicroelectronics MOSFET POWER MOSFET 25 V Through Hole TO-247-4   + 150 C Tube 1 Channel Si N-Channel 600 V 42 A 60 mOhms 2 V 70 nC Enhancement
STW56N65M2-4
1+
$7.770
10+
$7.020
25+
$6.700
100+
$5.820
RFQ
66
In-stock
STMicroelectronics MOSFET N-channel 650 V, 0.049 Ohm typ., 49 A MDmesh M2 Power MOS... 25 V Through Hole TO-247-4 - 55 C + 150 C Tube 1 Channel Si N-Channel 650 V 49 A 62 mOhms 2 V 93 nC Enhancement
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