- Rds On - Drain-Source Resistance :
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3 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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598
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 25 V | Through Hole | TO-247-4 | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 52 A | 45 mOhms | 2 V | 91 nC | Enhancement | |||||
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170
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 25 V | Through Hole | TO-247-4 | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 42 A | 60 mOhms | 2 V | 70 nC | Enhancement | |||||
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66
In-stock
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STMicroelectronics | MOSFET N-channel 650 V, 0.049 Ohm typ., 49 A MDmesh M2 Power MOS... | 25 V | Through Hole | TO-247-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 49 A | 62 mOhms | 2 V | 93 nC | Enhancement |