- Vgs - Gate-Source Voltage :
- Minimum Operating Temperature :
- Number of Channels :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
- Applied Filters :
7 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
674
In-stock
|
Fairchild Semiconductor | MOSFET PT9 30V/12V Nch PowerTrench SyncFET | +/- 16 V | SMD/SMT | Power56-8 | - 55 C | + 150 C | Reel | 1 Channel | N-Channel | 30 V | 218 A | 0.9 mOhms | 0.8 V | 139 nC | Enhancement | |||||
|
|
96,142
In-stock
|
IR / Infineon | MOSFET MOSFT 5.0A 29mOhm 30V 2.5V drv capable | 12 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 5 A | 29 mOhms | 0.8 V | 6.8 nC | |||||
|
|
14,078
In-stock
|
Diodes Incorporated | MOSFET MOSFET BVDSS: 8V-24V U-DFN2020-6 T&R 3K | 8 V | SMD/SMT | U-DFN2020-E-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 12 V | 11 A | 10 mOhms | 0.8 V | 27.3 nC | Enhancement | ||||
|
|
1,300
In-stock
|
Diodes Incorporated | MOSFET 20V N-Ch Enh Mode FET 12V 8Vgss 0.9W | 8 V | SMD/SMT | U-WLB1010-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 12 V | 4.8 A | 38 mOhms | 0.8 V | 3.2 nC | Enhancement | ||||
|
|
9,900
In-stock
|
Infineon Technologies | MOSFET 30V 1 N-CH HEXFET 3.5mOhms 41nC | 12 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 40 A | 3.5 mOhms | 0.8 V | 41 nC | |||||
|
|
130
In-stock
|
Infineon Technologies | MOSFET 20V Dual N-Channel HEXFET | 12 V | SMD/SMT | DirectFET-SA | - 40 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 20 V | 15 A | 3.8 mOhms | 0.8 V | 54 nC | |||||
|
|
4,069
In-stock
|
IR / Infineon | MOSFET MOSFET N-CH 20V 211A DIRECTFET | 12 V | SMD/SMT | DirectFET-MD | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 211 A | 500 uOhms | 0.8 V | 105 nC | Directfet |
