- Manufacture :
- Package / Case :
- Maximum Operating Temperature :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
- Tradename :
3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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126
In-stock
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IXYS | MOSFET 82 Amps 300V 0.026 Ohm Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 300 V | 70 A | 26 mOhms | 5 V | 185 nC | Enhancement | Polar, HiPerFET | |||
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14,000
In-stock
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Infineon Technologies | MOSFET 300V, 70A, 32 mOhm 180 nC Qg, TO-247AC | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | Si | N-Channel | 300 V | 70 A | 32 mOhms | 5 V | 270 nC | Enhancement | ||||||
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9
In-stock
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IXYS | MOSFET tbd Amps 500V 0.06 Ohms Rds | 30 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 70 A | 52 mOhms | 5 V | 240 nC | Enhancement | PolarHV, ISOPLUS264, HiPerFET |
