Build a global manufacturer and supplier trusted trading platform.
Vds - Drain-Source Breakdown Voltage :
Rds On - Drain-Source Resistance :
Qg - Gate Charge :
4 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Channel Mode Tradename
IXTQ36N50P
1+
$6.570
10+
$5.940
25+
$5.660
100+
$4.920
RFQ
132
In-stock
IXYS MOSFET 36.0 Amps 500 V 0.17 Ohm Rds 30 V Through Hole TO-3P-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 500 V 36 A 170 mOhms 5 V 85 nC Enhancement PolarHV
IXTT36N50P
1+
$8.660
10+
$7.830
25+
$7.470
100+
$6.480
RFQ
55
In-stock
IXYS MOSFET 36.0 Amps 500 V 0.17 Ohm Rds 30 V SMD/SMT TO-268-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 500 V 36 A 170 mOhms 5 V 85 nC Enhancement PolarHV
IXTH36N50P
1+
$6.930
10+
$6.260
25+
$5.970
100+
$5.180
RFQ
58
In-stock
IXYS MOSFET 36.0 Amps 500 V 0.17 Ohm Rds 30 V Through Hole TO-247-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 500 V 36 A 170 mOhms 5 V 85 nC Enhancement PolarHV
IXFT36N60P
1+
$9.020
10+
$8.150
25+
$7.770
100+
$6.750
RFQ
8
In-stock
IXYS MOSFET 600V 36A 30 V SMD/SMT TO-268-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 600 V 36 A 190 mOhms 5 V 102 nC Enhancement PolarHV, HiPerFET
Page 1 / 1