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IMAGE	PART NO.	PRICE	QUANTITY		STOCK	MANUFACTURE	DESCRIPTION	Vgs - Gate-Source Voltage	Mounting Style	Package / Case	Minimum Operating Temperature	Maximum Operating Temperature	Packaging	Number of Channels	Technology	Transistor Polarity	Vds - Drain-Source Breakdown Voltage	Id - Continuous Drain Current	Rds On - Drain-Source Resistance	Vgs th - Gate-Source Threshold Voltage	Qg - Gate Charge	Channel Mode
	ZXMN20B28KTC	1+ $0.710 10+ $0.589 100+ $0.380 1000+ $0.304 2500+ $0.257		PDF RFQ	3,366 In-stock	Diodes Incorporated	MOSFET ENHANCE MODE MOSFET 200V N-CHANNEL	20 V	SMD/SMT	TO-252-3	- 55 C	+ 150 C	Reel	1 Channel	Si	N-Channel	200 V	2.3 A	750 mOhms	1.6 V	8.1 nC	Enhancement
	HUF76629D3ST_F085	1+ $1.170 10+ $0.997 100+ $0.766 500+ $0.677 2500+ $0.474		PDF RFQ	2,475 In-stock	Fairchild Semiconductor	MOSFET UltraFET Power MOSFET	16 V	SMD/SMT	TO-252-3	- 55 C	+ 175 C	Reel	1 Channel	Si	N-Channel	100 V	20 A	41 mOhms	1.6 V	39 nC
	IPD30N06S2L23ATMA3	1+ $0.840 10+ $0.711 100+ $0.546 500+ $0.483 2500+ $0.338		PDF RFQ	4,973 In-stock	Infineon Technologies	MOSFET N-CHANNEL_55/60V	20 V	SMD/SMT	TO-252-3	- 55 C	+ 175 C	Reel	1 Channel	Si	N-Channel	55 V	30 A	15.9 mOhms	1.6 V	33 nC	Enhancement

ZXMN20B28KTC

ZXMN20B28KTC

Diodes Incorporated

MOSFET ENHANCE MODE MOSFET 200V N-CHANNEL

Stock : 3,366

1+: $0.710

10+: $0.589

100+: $0.380

1000+: $0.304

2500+: $0.257

HUF76629D3ST_F085

HUF76629D3ST_F085

Fairchild Semiconductor

MOSFET UltraFET Power MOSFET

Stock : 2,475

1+: $1.170

10+: $0.997

100+: $0.766

500+: $0.677

2500+: $0.474

IPD30N06S2L23ATMA3

IPD30N06S2L23ATMA3

Infineon Technologies

MOSFET N-CHANNEL_55/60V

Stock : 4,973

1+: $0.840

10+: $0.711

100+: $0.546

500+: $0.483

2500+: $0.338

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