- Vgs - Gate-Source Voltage :
- Mounting Style :
- Maximum Operating Temperature :
- Packaging :
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38 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Qualification | Number of Channels | Pd - Power Dissipation | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | Package | Factory Pack Quantity | RoHS | |
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28,000
In-stock
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Vishay Semiconductors | MOSFET P-CHANNEL 40-V (D-S) 175C MOSFET | - 20 V, + 20 V | Tape & Reel (TR) | 1 Channel | 68 W | P-Channel | 40 V | 60 A | 7 mOhms | 2 V | 170 nC | PAKSO-8L | 2500 | Green available | |||||||||||
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GET PRICE |
9,650
In-stock
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Vishay Semiconductors | MOSFET -40V Vds PowerPAK AEC-Q101 Qualified | - 20 V, + 20 V | Tape & Reel (TR) | AEC-Q101 | 68 W | P-Channel | 40 V | 60 A | 7 mOhms | 2 V | 170 nC | PowerPAK-SO-8-4 | 3000 | Green available | ||||||||||
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9,917
In-stock
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Fairchild Semiconductor | MOSFET 60V Nch Dual Cool Power Trench MOSFET | 20 V | SMD/SMT | Power-33-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 60 V | 43 A | 1.1 mOhms | 3.5 V | 170 nC | Enhancement | PowerTrench | ||||||||
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3,986
In-stock
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Fairchild Semiconductor | MOSFET N-Channel Power Trench MOSFET | 20 V | SMD/SMT | H-PSOF-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 300 A | 2.2 mOhms | 2 V | 170 nC | Enhancement | PowerTrench | ||||||||
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1,912
In-stock
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Fairchild Semiconductor | MOSFET TO-leadless, MV7, 60V | 20 V | SMD/SMT | H-PSOF-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 300 A | 2.2 mOhms | 2 V | 170 nC | Enhancement | PowerTrench | ||||||||
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5,000
In-stock
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Infineon Technologies | MOSFET N-Ch 600V 53A TO247-3 CoolMOS C6 | +/- 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 53 A | 63 mOhms | 2.5 V | 170 nC | Enhancement | CoolMOS | ||||||||
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244
In-stock
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Infineon Technologies | MOSFET HIGH POWER PRICE/PERFORM | +/- 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 77.5 A | 37 mOhms | 3.5 V | 170 nC | Enhancement | CoolMOS | ||||||||
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GET PRICE |
14,250
In-stock
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IR / Infineon | MOSFET MOSFET, 100V, 192A 4.2 mOhm, 170 nC Qg | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 192 A | 4.2 mOhms | 2 V | 170 nC | Enhancement | StrongIRFET | |||||||
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334
In-stock
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Infineon Technologies | MOSFET N-Ch 700V 53.5A TO247-3 CoolMOS C6 | +/- 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 53.5 A | 63 mOhms | 2.5 V | 170 nC | Enhancement | CoolMOS | ||||||||
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3,109
In-stock
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IR / Infineon | MOSFET 100V 127A 6mOhm Automotive MOSFET | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 127 A | 4.8 mOhms | 2 V | 170 nC | Enhancement | |||||||||
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1,165
In-stock
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Infineon Technologies | MOSFET 60V, 298A, 1.95 mOhm 170 NC Qg | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 298 A | 1.6 mOhms | 1 V | 170 nC | Enhancement | StrongIRFET | ||||||||
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706
In-stock
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Infineon Technologies | MOSFET 60V, 298A, 1.95 mOhm 170 NC Qg | 20 V | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 298 A | 1.6 mOhms | 1 V | 170 nC | Enhancement | StrongIRFET | ||||||||
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1,115
In-stock
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IR / Infineon | MOSFET MOSFT 55V 131A 5.3mOhm 170nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 55 V | 131 A | 5.3 mOhms | 4 V | 170 nC | ||||||||||
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759
In-stock
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IR / Infineon | MOSFET MOSFET, 100V, 192A 4.2 mOhm, 170 nC Qg | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 192 A | 4.2 mOhms | 2 V | 170 nC | Enhancement | StrongIRFET | ||||||||
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651
In-stock
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Infineon Technologies | MOSFET MOSFT 55V 174A 5mOhm 170nC | 20 V | Through Hole | TO-273-3 | Tube | 1 Channel | Si | N-Channel | 55 V | 174 A | 5 mOhms | 170 nC | |||||||||||||
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126
In-stock
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Infineon Technologies | MOSFET HIGH POWER PRICE/PERFORM | +/- 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 77.5 A | 37 mOhms | 3.5 V | 170 nC | Enhancement | CoolMOS | ||||||||
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750
In-stock
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Infineon Technologies | MOSFET 55V 1 N-CH HEXFET 5.3mOhms 170nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 55 V | 131 A | 5.3 mOhms | 170 nC | Enhancement | ||||||||||
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42,800
In-stock
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Infineon Technologies | MOSFET MOSFT 100V 140A 7mOhm 170nC | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 100 V | 140 A | 5.6 mOhms | 170 nC | |||||||||||||
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5,000
In-stock
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Infineon Technologies | MOSFET N-Ch 600V 53A TO247-3 CoolMOS C6 | +/- 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 53 A | 63 mOhms | 2.5 V | 170 nC | Enhancement | CoolMOS | ||||||||
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175
In-stock
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Infineon Technologies | MOSFET 40V 1 N-CH HEXFET 1.6mOhms 170nC | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 320 A | 1.6 mOhms | 170 nC | Enhancement | ||||||||||
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407
In-stock
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Infineon Technologies | MOSFET 55V 1 N-CH HEXFET 5.3mOhms 170nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 131 A | 5.3 mOhms | 170 nC | Enhancement | ||||||||||
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GET PRICE |
12,000
In-stock
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Infineon Technologies | MOSFET MOSFT 100V 140A 7mOhm 170nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 130 A | 5.6 mOhms | 4 V | 170 nC | |||||||||
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58
In-stock
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Infineon Technologies | MOSFET AUTO 55V 1 N-CH HEXFET 5.3mOhms | 20 V | Through Hole | TO-220-3 | - 55 C | Tube | 1 Channel | Si | N-Channel | 55 V | 169 A | 5.3 mOhms | 170 nC | Enhancement | |||||||||||
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54
In-stock
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IR / Infineon | MOSFET AUTO 100V 1 N-CH HEXFET 7mOhms | 20 V | Through Hole | TO-262-3 | - 55 C | Tube | 1 Channel | Si | N-Channel | 100 V | 130 A | 7 mOhms | 170 nC | Enhancement | |||||||||||
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39
In-stock
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Microsemi | MOSFET Power FREDFET - MOS8 | 30 V | SMD/SMT | D3PAK-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 500 V | 42 A | 110 mOhms | 2.5 V | 170 nC | Enhancement | ||||||||||
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5
In-stock
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IXYS | MOSFET 27 Amps 800V 0.32 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 27 A | 320 mOhms | 4.5 V | 170 nC | Enhancement | HyperFET | ||||||||
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3,872
In-stock
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Infineon Technologies | MOSFET MOSFT 40V 320A 1.6mOhm 170nC Qg | 20 V | SMD/SMT | TO-252-3 | - 55 C | Reel | 1 Channel | Si | N-Channel | 40 V | 320 A | 1.6 mOhms | 170 nC | Enhancement | |||||||||||
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55
In-stock
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Microsemi | MOSFET Power FREDFET - MOS8 | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Si | N-Channel | 500 V | 42 A | 110 mOhms | 4 V | 170 nC | Enhancement | POWER MOS 8 | ||||||||||
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VIEW | IXYS | MOSFET 27 Amps 800V 0.32 Rds | 20 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 27 A | 320 mOhms | 4.5 V | 170 nC | Enhancement | HyperFET | ||||||||
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VIEW | Infineon Technologies | MOSFET AUTO 100V 1 N-CH HEXFET 7mOhms | 20 V | SMD/SMT | TO-263-3 | - 55 C | Tube | 1 Channel | Si | N-Channel | 100 V | 130 A | 7 mOhms | 170 nC | Enhancement |
