- Vgs - Gate-Source Voltage :
- Mounting Style :
- Package / Case :
- Maximum Operating Temperature :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Applied Filters :
11 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
2,881
In-stock
|
Infineon Technologies | MOSFET 1 P-CH -55V HEXFET 175mOhms 12.7nC | 20 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | P-Channel | - 55 V | - 11 A | 175 mOhms | 12.7 nC | StrongIRFET | ||||||||
|
2,505
In-stock
|
IR / Infineon | MOSFET AUTO -55V 1 P-CH HEXFET 175mOhms | 20 V | SMD/SMT | TO-252-3 | - 55 C | Tube | 1 Channel | Si | P-Channel | - 55 V | - 11 A | 175 mOhms | 12.7 nC | Enhancement | |||||||
|
GET PRICE |
159,300
In-stock
|
Infineon Technologies | MOSFET 1 P-CH -55V HEXFET 175mOhms 12.7nC | 20 V | SMD/SMT | TO-252-3 | Tube | 1 Channel | Si | P-Channel | - 55 V | - 11 A | 175 mOhms | 12.7 nC | ||||||||
|
27,770
In-stock
|
Infineon Technologies | MOSFET MOSFT P-Ch -55V -11A 175mOhm 12.7nC | 20 V | Through Hole | TO-251-3 | Tube | 1 Channel | Si | P-Channel | - 55 V | - 11 A | 175 mOhms | 12.7 nC | |||||||||
|
5,500
In-stock
|
IR / Infineon | MOSFET MOSFT PCh -55V -12A 175mOhm 12.7nC | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | P-Channel | - 55 V | - 12 A | 175 mOhms | - 4 V | 12.7 nC | ||||||
|
973
In-stock
|
Infineon Technologies | MOSFET MOSFT PCh -55V -12A 175mOhm 12.7nC | 20 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | P-Channel | - 55 V | - 12 A | 175 mOhms | 12.7 nC | |||||||||
|
250
In-stock
|
IXYS | MOSFET N-CH MOSFETS (D2) 500V 800MA | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 800 mA | 4.6 Ohms | 12.7 nC | |||||||
|
140
In-stock
|
IXYS | MOSFET N-CH MOSFETS 500V 800MA | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 800 mA | 4.6 Ohms | 12.7 nC | |||||||
|
VIEW | Siliconix / Vishay | MOSFET N Ch 40Vds 20Vgs AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TSOP-6 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 8 A | 0.026 Ohms | 1.5 V | 12.7 nC | Enhancement | |||||
|
2,980
In-stock
|
IR / Infineon | MOSFET AUTO -55V 1 P-CH HEXFET 175mOhms | 20 V | SMD/SMT | TO-252-3 | - 55 C | Reel | 1 Channel | Si | P-Channel | - 55 V | - 11 A | 175 mOhms | 12.7 nC | Enhancement | |||||||
|
VIEW | IR / Infineon | MOSFET AUTO -55V 1 P-CH HEXFET 175mOhms | 20 V | SMD/SMT | TO-252-3 | - 55 C | Reel | 1 Channel | Si | P-Channel | - 55 V | - 11 A | 175 mOhms | 12.7 nC | Enhancement |