- Mounting Style :
- Package / Case :
- Rds On - Drain-Source Resistance :
- Tradename :
- Applied Filters :
14 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
1,598
In-stock
|
Fairchild Semiconductor | MOSFET N-Channel Power Trench MOSFET | 20 V | SMD/SMT | H-PSOF-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 240 A | 1.2 mOhms | 3.2 V | 90 nC | Enhancement | PowerTrench | ||||
|
927
In-stock
|
Fairchild Semiconductor | MOSFET TO-leadless, PT8, 40V | 20 V | SMD/SMT | H-PSOF-8 | - 55 C | + 175 C | Reel | Si | N-Channel | 40 V | 240 A | 1.2 mOhms | 2 V | 90 nC | Enhancement | PowerTrench | |||||
|
2,730
In-stock
|
STMicroelectronics | MOSFET N-channel 300 V, 0.063 Ohm typ., 42 A STripFET(TM) II ... | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 300 V | 42 A | 63 mOhms | 2 V | 90 nC | Enhancement | |||||
|
1,872
In-stock
|
STMicroelectronics | MOSFET N-channel 68 V, 8.2 mOhm typ., 85 A STripFET DeepGATE... | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | 1 Channel | Si | N-Channel | 68 V | 85 A | 8.2 mOhms | 2 V | 90 nC | Enhancement | ||||||
|
373
In-stock
|
Infineon Technologies | MOSFET N-Ch 40V 100A D2PAK-2 OptiMOS-T2 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 100 A | 2.1 mOhms | 2 V | 90 nC | Enhancement | OptiMOS | ||||
|
121
In-stock
|
IR / Infineon | MOSFET TRENCH_MOSFETS | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | Si | N-Channel | 60 V | 71 A | 3.3 mOhms | 4 V | 90 nC | Enhancement | ||||||
|
23
In-stock
|
IXYS | MOSFET 86 Amps 200V 29 Rds | 30 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | Si | N-Channel | 200 V | 86 A | 29 mOhms | 5 V | 90 nC | Enhancement | ||||||
|
959
In-stock
|
STMicroelectronics | MOSFET N-Ch 300V 0.063Ohm 42A pwr MOSFET | 20 V | Through Hole | TO-220-3 | + 175 C | Tube | 1 Channel | Si | N-Channel | 300 V | 42 A | 63 mOhms | 3 V | 90 nC | |||||||
|
574
In-stock
|
STMicroelectronics | MOSFET N-Ch 300 V 0.063 Ohm 42 A STripFET(TM) | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 300 V | 42 A | 63 mOhms | 3 V | 90 nC | Enhancement | STripFET | ||||
|
VIEW | IXYS | MOSFET 86 Amps 200V 29 Rds | 30 V | Through Hole | TO-3P-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 86 A | 29 mOhms | 5 V | 90 nC | Enhancement | |||||
|
VIEW | Infineon Technologies | MOSFET N-Ch 40V 100A D2PAK-2 OptiMOS-T2 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 100 A | 2.1 mOhms | 2 V | 90 nC | Enhancement | |||||
|
GET PRICE |
299,000
In-stock
|
IR / Infineon | MOSFET TRENCH_MOSFETS | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 80 A | 2.6 mOhms | 2.2 V | 90 nC | Enhancement | StrongIRFET | |||
|
800
In-stock
|
Infineon Technologies | MOSFET AUTO 100V 1 N-CH HEXFET 14mOhms | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 73 A | 14 mOhms | 4 V | 90 nC | ||||||
|
VIEW | IR / Infineon | MOSFET AUTO 100V 1 N-CH HEXFET 14mOhms | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 73 A | 14 mOhms | 4 V | 90 nC |