- Number of Channels :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
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2 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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3,635
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Infineon Technologies | MOSFET N-Ch 650V 10A ThinPAK-4 CoolMOS C7 | 20 V | SMD/SMT | VSON-4 | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 10 A | 230 mOhms | 3 V to 4 V | 20 nC | Enhancement | CoolMOS | |||
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VIEW | Infineon Technologies | MOSFET N-Ch 700V 5.8A VSON-5 | 30 V | SMD/SMT | VSON-4 | - 40 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 650 V | 5.8 A | 725 mOhms | 4 V | 20 nC | CoolMOS |
