- Manufacture :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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30,420
In-stock
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onsemi | MOSFET NFET DPAK 100V 19A 96MO | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 17 A | 81 mOhms | 2 V to 4 V | 20 nC | ||||
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VIEW | Infineon Technologies | MOSFET AUTO 55V 1 N-CH HEXFET 75mOhms | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 55 V | 17 A | 75 mOhms | 4 V | 20 nC | Enhancement | |||
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VIEW | IR / Infineon | MOSFET AUTO 55V 1 N-CH HEXFET 75mOhms | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 55 V | 17 A | 75 mOhms | 4 V | 20 nC | Enhancement |
