- Mounting Style :
- Package / Case :
- Minimum Operating Temperature :
- Rds On - Drain-Source Resistance :
- Tradename :
13 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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954
In-stock
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STMicroelectronics | MOSFET N-channel 650 V 0.370ohm 8.5A Mdmesh | 25 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 8.5 A | 390 mOhms | 20 nC | ||||||
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904
In-stock
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Fairchild Semiconductor | MOSFET 200V, 18A, 140mOhm UniFET FRFET MOSFET | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 200 V | 18 A | 140 mOhms | 5 V | 20 nC | Enhancement | UniFET | |||
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1,148
In-stock
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Fairchild Semiconductor | MOSFET 600V N-Channel MOSFET | 20 V | Through Hole | TO-220FP-3 | - 50 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 7.4 A | 600 mOhms | 2.5 V to 3.5 V | 20 nC | SuperFET II | ||||
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965
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 25 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 12 A | 275 mOhms | 2 V | 20 nC | Enhancement | ||||
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272
In-stock
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Infineon Technologies | MOSFET HIGH POWER BEST IN CLASS | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 7 A | 199 mOhms | 3 V | 20 nC | Enhancement | CoolMOS | |||
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342
In-stock
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Infineon Technologies | MOSFET N-Ch 650V 11A TO220-3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 11 A | 199 mOhms | 3 V | 20 nC | Enhancement | CoolMOS | |||
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11
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 25 V | Through Hole | TO-220-3 | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 12 A | 275 mOhms | 2 V | 20 nC | Enhancement | |||||
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42
In-stock
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IXYS | MOSFET POWER MOSFET N-CHANNEL 500V 8A | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 8 A | 800 mOhms | 5.5 V | 20 nC | Enhancement | PolarHV | |||
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VIEW | Infineon Technologies | MOSFET HIGH POWER BEST IN CLASS | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 7 A | 199 mOhms | 3 V | 20 nC | Enhancement | CoolMOS | |||
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VIEW | Toshiba | MOSFET Power MOSFET N-Channel | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 9.3 A | 430 mOhms | 2.5 V | 20 nC | Enhancement | ||||
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266
In-stock
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Infineon Technologies | MOSFET 650V CoolMOS C7 Power Trans; 225mOhm | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 11 A | 199 mOhms | 3 V | 20 nC | Enhancement | CoolMOS | |||
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46
In-stock
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IXYS | MOSFET 1.1 Ohms Rds | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 7 A | 1.1 Ohms | 5.5 V | 20 nC | Enhancement | PolarHV | |||
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355
In-stock
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IR / Infineon | MOSFET 500V 3.6A 1.85 Ohm 75ns HEXFET ZeroSMPS | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 3.6 A | 1.85 Ohms | 20 nC |