- Vgs - Gate-Source Voltage :
- Mounting Style :
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Number of Channels :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Applied Filters :
35 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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7,085
In-stock
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IR / Infineon | MOSFET 1 P-CH -30V HEXFET 4.6mOhms 58nC | 20 V | SMD/SMT | SO-8 | Tube | Si | P-Channel | - 30 V | - 20 A | 6.8 mOhms | 58 nC | |||||||||
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1,210
In-stock
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Fairchild Semiconductor | MOSFET SuperFET2 800V 290mOhm D2PAK PKG | 20 V, 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 800 V | 17 A | 290 mOhms | 2.5 V | 58 nC | Enhancement | SuperFET II | |||
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799
In-stock
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Fairchild Semiconductor | MOSFET 800V SuperFET2 N-Chnl Mosfet | 20 V, 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 17 A | 290 mOhms | 2.5 V | 58 nC | Enhancement | SuperFET II | |||
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863
In-stock
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IXYS | MOSFET -120 Amps -65V 0.01 Rds | 15 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 65 V | - 120 A | 10 mOhms | 58 nC | ||||||
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1,442
In-stock
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onsemi | MOSFET NFET SO8FL 100V 132A 4.8M | 20 V | SMD/SMT | SO-FL-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 132 A | 3.8 mOhms | 2 V | 58 nC | Enhancement | ||||
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3,979
In-stock
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Infineon Technologies | MOSFET P-Ch -30V -78.6A TDSON-8 OptiMOS P3 | +/- 25 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 78.6 A | 6.1 mOhms | - 3.1 V | 58 nC | Enhancement | OptiMOS | |||
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3,823
In-stock
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IR / Infineon | MOSFET MOSFT 60V 84A 8.5mOhm 58nC | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 75 A | 8.5 mOhms | 58 nC | Enhancement | |||||
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1,816
In-stock
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Infineon Technologies | MOSFET MOSFET, 100V, 64A, 1 50 nC Qg, TO-262 | 20 V | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 61 A | 13.9 mOhms | 4 V | 58 nC | Enhancement | ||||
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3,857
In-stock
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IR / Infineon | MOSFET MOSFET N-CH 30V 100A PQFN | 20 V | SMD/SMT | PQFN-8 | Reel | 1 Channel | Si | N-Channel | 30 V | 100 A | 1.1 mOhms | 2.2 V | 58 nC | |||||||
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4,000
In-stock
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IR / Infineon | MOSFET MOSFET, 100V, 58A 13.5 mOhm, 58 nC Qg | SMD/SMT | PQFN-8 | Reel | 1 Channel | Si | N-Channel | 100 V | 50 A | 13.5 mOhms | 58 nC | StrongIRFET | ||||||||
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395
In-stock
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Fairchild Semiconductor | MOSFET SuperFET2 800V 290 mOhm | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 17 A | 290 mOhms | 2.5 V | 58 nC | Enhancement | SuperFET II | |||
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997
In-stock
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Infineon Technologies | MOSFET AUTO 60V 1 N-CH HEXFET 8.5mOhms | 20 V | Through Hole | TO-220-3 | - 55 C | Tube | 1 Channel | Si | N-Channel | 60 V | 84 A | 8.5 mOhms | 58 nC | Enhancement | ||||||
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2,500
In-stock
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Siliconix / Vishay | MOSFET P-Channel 30V AEC-Q101 Qualified | +/- 20 V | SMD/SMT | SO-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 15 A | 0.013 Ohms | - 2.5 V | 58 nC | Enhancement | TrenchFET | |||
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VIEW | Infineon Technologies | MOSFET MOSFET N CH 60V 75A TO-220AB | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 75 A | 6 mOhms | 3.7 V | 58 nC | StrongIRFET | ||||
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16,000
In-stock
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IR / Infineon | MOSFET MOSFT P-Ch -30V -20A 4.6mOhm | 20 V | SMD/SMT | SO-8 | Reel | Si | P-Channel | - 30 V | - 20 A | 6.8 mOhms | 58 nC | |||||||||
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1,107
In-stock
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Infineon Technologies | MOSFET 60V StrongIRFET Power Mosfet | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 71 A | 7.9 mOhms | 3.7 V | 58 nC | StrongIRFET | ||||
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224
In-stock
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Infineon Technologies | MOSFET MOSFT 60V 84A 8.5mOhm 58nC | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 60 V | 84 A | 8.5 mOhms | 58 nC | ||||||||
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457
In-stock
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Infineon Technologies | MOSFET N-Ch 100V 69A TO220-3 OptiMOS 2 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 69 A | 9.9 mOhms | 1.2 V | 58 nC | Enhancement | OptiMOS | |||
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20
In-stock
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IXYS | MOSFET PHASE LEG MOSFET MOD HALF-BRIDGE 600V 1... | 30 V | Through Hole | ISOPLUS-i4-PAK-5 | - 55 C | + 150 C | Tube | 2 Channel | Si | N-Channel | 600 V | 12 A | 350 mOhms | 3 V | 58 nC | |||||
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60
In-stock
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IXYS | MOSFET -120 Amps -65V 0.01 Rds | 15 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 65 V | - 120 A | 10 mOhms | 58 nC | ||||||
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998
In-stock
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IR / Infineon | MOSFET 1 P-CH -100V HEXFET 200mOhms 38.7nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 100 V | - 14 A | 200 mOhms | - 4 V | 58 nC | Enhancement | ||||
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4,973
In-stock
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Toshiba | MOSFET N-CH Mosfet 60V | 20 V | SMD/SMT | DSOP-Advance-8 | - | - | Reel | 1 Channel | Si | N-Channel | 100 V | 92 A | 3.7 mOhms | 2 V | 58 nC | Enhancement | ||||
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19,440
In-stock
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Toshiba | MOSFET U-MOSVIII-H 100V 93A 58nC MOSFET | 20 V | SMD/SMT | SOP-Advance-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 93 A | 3.7 mOhms | 2 V to 4 V | 58 nC | UMOSVIII | ||||
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555
In-stock
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Texas instruments | MOSFET 60V, N-channel NexFET Pwr MOSFET | 20 V | SMD/SMT | VSON-Clip-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 100 A | 2.5 mOhms | 1.5 V | 58 nC | Enhancement | ||||
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105
In-stock
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Microsemi | MOSFET Power FREDFET - MOS8 | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 1000 V | 7 A | 1.76 Ohms | 2.5 V | 58 nC | Enhancement | |||||
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2,000
In-stock
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Infineon Technologies | MOSFET 60V StrongIRFET Power Mosfet | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 71 A | 8.5 mOhms | 3.7 V | 58 nC | StrongIRFET | ||||
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1,544
In-stock
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Infineon Technologies | MOSFET 100V 10.7mOhm 62A HEXFET 140W 50nC | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 62 A | 10.7 mOhms | 4 V | 58 nC | Enhancement | StrongIRFET | |||
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6,000
In-stock
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Diodes Incorporated | MOSFET MOSFET BVDSS: 25V-30 PowerDI3333-8 T&R 3K | +/- 25 V | SMD/SMT | PowerDI3333-8 | - 55 C | + 150 C | Reel | Si | P-Channel | - 30 V | - 9.8 A | 9 mOhms | - 3 V | 58 nC | Enhancement | |||||
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180
In-stock
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IXYS | MOSFET 600V 22A | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 22 A | 350 mOhms | 5.5 V | 58 nC | Enhancement | PolarHV, HiPerFET | |||
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VIEW | IR / Infineon | MOSFET AUTO 60V 1 N-CH HEXFET 8.5mOhms | 20 V | SMD/SMT | TO-263-3 | - 55 C | Tube | 1 Channel | Si | N-Channel | 60 V | 84 A | 8.5 mOhms | 58 nC | Enhancement |
