- Mounting Style :
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Applied Filters :
18 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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2,923
In-stock
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Nexperia | MOSFET 40V P-channel Trench MOSFET | +/- 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 40 V | - 1.5 A | 400 mOhms | - 1 V | 4.7 nC | Enhancement | ||||
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10,679
In-stock
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IR / Infineon | MOSFET MOSFT 20V 3.2A 100mOhm 4.7nC LogLvl | 12 V | SMD/SMT | Micro-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 3.2 A | 170 mOhms | 0.7 V | 4.7 nC | |||||
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3,024
In-stock
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Infineon Technologies | MOSFET N-Ch 250V 5A DPAK-2 | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 250 V | 5 A | 430 mOhms | 3 V | 4.7 nC | Enhancement | |||||
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2,319
In-stock
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Infineon Technologies | MOSFET N-Ch 20V 3.7A SOT-23-3 | 8 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 3.7 A | 17 mOhms | 300 mV | 4.7 nC | Enhancement | ||||
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2,841
In-stock
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Diodes Incorporated | MOSFET MOSFET N-CHANNEL | 25 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 10 A | 16 mOhms | 4.7 nC | ||||||
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4,288
In-stock
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onsemi | MOSFET NCH 4V Power MOSFET | 12 V | SMD/SMT | SOT-323-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 4 A | 130 mOhms | 400 mV | 4.7 nC | Enhancement | ||||
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1,188
In-stock
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Infineon Technologies | MOSFET 1 P-CH -30V HEXFET 59mOhms 4.7nC | 20 V | SMD/SMT | SO-8 | Reel | Si | P-Channel | - 30 V | - 5.4 A | 110 mOhms | 4.7 nC | |||||||||
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864
In-stock
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Infineon Technologies | MOSFET SMALL SIGNALN-CH | 8 V | SMD/SMT | TSOP-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 7.5 A | 22 mOhms | 300 mV | 4.7 nC | Enhancement | ||||
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2,646
In-stock
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onsemi | MOSFET NCH 1.8V DRIVESERIES | 12 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 4 A | 38 mOhms | 400 mV | 4.7 nC | Enhancement | ||||
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1,977
In-stock
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onsemi | MOSFET NFET DPAK 60V 9A 170MOHM | 15 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 9 A | 153 mOhms | 1.7 V | 4.7 nC | |||||
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86
In-stock
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IXYS | MOSFET 500V to 1200V Polar Power MOSFET | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1200 V | 200 mA | 60 Ohms | 4 V | 4.7 nC | Enhancement | ||||
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220
In-stock
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Infineon Technologies | MOSFET | 16 V | SMD/SMT | TO-252-3 | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 700 V | 4 A | 1.15 Ohms | 2.5 V | 4.7 nC | Enhancement | CoolMOS | |||
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7,085
In-stock
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Toshiba | MOSFET P-Ch U-MOS VI FET ID -2.6A -20V 290pF | 8 V | SMD/SMT | ES6-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 2.6 A | 250 mOhms | - 0.3 V to - 1 V | 4.7 nC | |||||
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GET PRICE |
14,880
In-stock
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Infineon Technologies | MOSFET | 16 V | Through Hole | TO-251-3 | - 40 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 700 V | 4 A | 1.15 Ohms | 2.5 V | 4.7 nC | Enhancement | CoolMOS | ||
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VIEW | Infineon Technologies | MOSFET N-Ch 20V 3.7A SOT-23-3 | 8 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 3.7 A | 17 mOhms | 300 mV | 4.7 nC | Enhancement | ||||
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2,203
In-stock
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IR / Infineon | MOSFET MOSFT P-Ch -30V -5.4A 59mOhm | 20 V | SMD/SMT | SO-8 | Tube | Si | P-Channel | - 30 V | - 5.4 A | 110 mOhms | 4.7 nC | |||||||||
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359
In-stock
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Nexperia | MOSFET PMPB20UN/SOT1220/REEL7 | SMD/SMT | DFN2020MD-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 9.4 A | 19 mOhms | 0.7 V | 4.7 nC | Enhancement | |||||
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400
In-stock
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IR / Infineon | MOSFET MOSFT 30V 25A 6.6mOhm 9.6nC Qg | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 12 A | 12.8 mOhms | 4.7 nC | Enhancement |
