- Manufacture :
- Vgs - Gate-Source Voltage :
- Package / Case :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Applied Filters :
3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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2,669
In-stock
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STMicroelectronics | MOSFET N-CH 600V 1.06Ohm 4.5A MDmesh M2 | 25 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 4.5 A | 1.06 Ohms | 3 V | 8 nC | ||||
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983
In-stock
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STMicroelectronics | MOSFET N-CH 600V 1.06Ohm 4.5A MDmesh M2 | 25 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 4.5 A | 1.06 Ohms | 3 V | 8 nC | ||||
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515
In-stock
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onsemi | MOSFET PCH -40V -10A TP(IPAK) | +/- 10 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Bulk | 1 Channel | Si | P-Channel | - 40 V | - 10 A | 86 mOhms | - 1.4 V | 8 nC | Enhancement |
