- Manufacture :
- Mounting Style :
- Package / Case :
- Minimum Operating Temperature :
- Number of Channels :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
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12 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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736
In-stock
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STMicroelectronics | MOSFET N-Ch, 650V-1ohm Zener SuperMESH 6.4A | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 6.4 A | 1.2 Ohms | 3.75 V | 41 nC | Enhancement | |||||
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1,342
In-stock
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Infineon Technologies | MOSFET N-Ch 650V 11.4A D2PAK-2 CoolMOS CFD2 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 11.4 A | 280 mOhms | 3.5 V | 41 nC | Enhancement | CoolMOS | ||||
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997
In-stock
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Infineon Technologies | MOSFET N-Ch 650V 11.4A TO220-3 CoolMOS CFD2 | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 11.4 A | 280 mOhms | 3.5 V | 41 nC | Enhancement | CoolMOS | ||||
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696
In-stock
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STMicroelectronics | MOSFET N-Ch 650 Volt 6.4Amp Zener SuperMESH | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 7 A | 1.2 Ohms | 41 nC | Enhancement | ||||||
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1,000
In-stock
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Infineon Technologies | MOSFET N-Ch 650V 11.4A D2PAK-2 | 20 V | SMD/SMT | TO-263-3 | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 11.4 A | 280 mOhms | 3.5 V | 41 nC | Enhancement | CoolMOS | ||||
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450
In-stock
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Infineon Technologies | MOSFET N-Ch 650V 11.4A TO220FP CoolMOS CFD2 | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 11.4 A | 280 mOhms | 3.5 V | 41 nC | Enhancement | CoolMOS | ||||
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58
In-stock
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Infineon Technologies | MOSFET N-Ch 650V 11.4A TO247-3 CoolMOS CFD2 | 30 V | Through Hole | TO-247-3 | Tube | 1 Channel | Si | N-Channel | 650 V | 11.4 A | 310 mOhms | 4 V | 41 nC | CoolMOS | |||||||
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VIEW | Infineon Technologies | MOSFET N-Ch 650V 11.4A TO220FP CoolMOS CFD2 | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 11.4 A | 280 mOhms | 3.5 V | 41 nC | Enhancement | CoolMOS | ||||
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VIEW | Infineon Technologies | MOSFET N-Ch 650V 11.4A TO220-3 CoolMOS CFD2 | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 11.4 A | 280 mOhms | 3.5 V | 41 nC | Enhancement | CoolMOS | ||||
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VIEW | Infineon Technologies | MOSFET N-Ch 650V 11.4A D2PAK-2 CoolMOS CFD2 | 20 V | SMD/SMT | TO-263-3 | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 11.4 A | 280 mOhms | 3.5 V | 41 nC | Enhancement | CoolMOS | ||||
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VIEW | Infineon Technologies | MOSFET N-Ch 650V 11.4A D2PAK-2 | 20 V | SMD/SMT | TO-263-3 | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 11.4 A | 280 mOhms | 3.5 V | 41 nC | Enhancement | CoolMOS | ||||
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VIEW | Infineon Technologies | MOSFET N-Ch 700V 10.9A VSON-5 | 30 V | SMD/SMT | VSON-4 | - 40 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 650 V | 10.9 A | 340 mOhms | 4 V | 41 nC | CoolMOS |