- Manufacture :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Tradename :
- Applied Filters :
5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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171
In-stock
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IXYS | MOSFET -16.0 Amps -600V 0.720 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 600 V | - 16 A | 720 mOhms | - 4 V | 92 nC | Enhancement | PolarP | |||
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79
In-stock
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STMicroelectronics | MOSFET N-channel 800 V, 0.07 O typ., 46 A MDmesh K5 Power MOSF... | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 800 V | 46 A | 80 mOhms | 4 V | 92 nC | Enhancement | |||||
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32
In-stock
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IXYS | MOSFET POLAR HIPERFET WITH REDUCED RDS 1200V 6... | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1200 V | 6 A | 2.75 Ohms | 5 V | 92 nC | Enhancement | Polar, HiPerFET | |||
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2
In-stock
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IXYS | MOSFET -10.0 Amps -600V 0.790 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | Si | P-Channel | - 600 V | - 10 A | 790 mOhms | - 4 V | 92 nC | Enhancement | PolarP | ||||
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5,010
In-stock
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Fairchild Semiconductor | MOSFET 150V N-Channel PowerTrench MOSFET | 20 V | Through Hole | TO-247-3 | Tube | 1 Channel | Si | N-Channel | 150 V | 167 A | 4.8 mOhms | 4 V | 92 nC | PowerTrench |
