- Manufacture :
- Vgs - Gate-Source Voltage :
- Package / Case :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Applied Filters :
13 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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47,027
In-stock
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Infineon Technologies | MOSFET P-Ch -60V -170mA SOT-23-3 | +/- 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 170 mA | 5.8 Ohms | - 2 V | 1.5 nC | Enhancement | |||
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15,227
In-stock
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Diodes Incorporated | MOSFET 20V P-Ch ENH Mode 495mOhm -4.5V -0.77A | + /- 8 V | SMD/SMT | X2-DFN1006-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 1.17 A | 960 mOhms | - 0.7 V | 1.5 nC | Enhancement | |||
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20,433
In-stock
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Infineon Technologies | MOSFET P-Ch -60V 150mA SOT-323-3 | +/- 20 V | SMD/SMT | SOT-323-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 150 mA | 4.6 Ohms | - 2 V | 1.5 nC | Enhancement | |||
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23,299
In-stock
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Infineon Technologies | MOSFET P-Ch -60V -170mA SOT-23-3 | +/- 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 170 mA | 5.8 Ohms | - 2 V | 1.5 nC | Enhancement | |||
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15,516
In-stock
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Infineon Technologies | MOSFET P-Ch -60V -170mA SOT-23-3 | +/- 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 170 mA | 5.8 Ohms | - 2 V | 1.5 nC | Enhancement | |||
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7,950
In-stock
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Infineon Technologies | MOSFET P-Ch -60V 150mA SOT-323-3 | +/- 20 V | SMD/SMT | SOT-323-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 150 mA | 4.6 Ohms | - 2 V | 1.5 nC | Enhancement | |||
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4,670
In-stock
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Diodes Incorporated | MOSFET 20V P-Ch Enh FET PD 0.24W MIN RDSon | +/- 8 V | SMD/SMT | SOT-523-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 650 mA | 495 mOhms | - 700 mV | 1.5 nC | Enhancement | |||
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6,844
In-stock
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Infineon Technologies | MOSFET P-Ch -60V -170mA SOT-23-3 | +/- 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 170 mA | 5.8 Ohms | - 2 V | 1.5 nC | Enhancement | |||
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14,983
In-stock
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Infineon Technologies | MOSFET P-Ch -60V -170mA SOT-23-3 | +/- 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 170 mA | 5.8 Ohms | - 2 V | 1.5 nC | Enhancement | |||
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6,618
In-stock
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Diodes Incorporated | MOSFET MOSFET BVDSS: 25V-30 X2-DFN1006-3 T&R 10K | +/- 8 V | SMD/SMT | X2-DFN1006-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 760 mA | 450 mOhms | - 1.1 V | 1.5 nC | Enhancement | |||
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2,478
In-stock
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Diodes Incorporated | MOSFET MOSFET BVDSS: 8V-24V X1-DFN1212-3 T&R 3K | +/- 8 V | SMD/SMT | X1-DFN1212-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 1.14 A | 495 mOhms | - 1.2 V | 1.5 nC | Enhancement | |||
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6,850
In-stock
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Diodes Incorporated | MOSFET 20V P-Ch Enh FET Pd .43W -8Vgss -5.0A | +/- 8 V | SMD/SMT | X1-DFN1006-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 770 mA | 960 mOhms | - 700 mV | 1.5 nC | Enhancement | |||
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18,000
In-stock
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Infineon Technologies | MOSFET P-Ch -60V 150mA SOT-323-3 | +/- 20 V | SMD/SMT | SOT-323-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 150 mA | 4.6 Ohms | - 2 V | 1.5 nC | Enhancement |
