- Vgs - Gate-Source Voltage :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Applied Filters :
13 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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47,027
In-stock
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Infineon Technologies | MOSFET P-Ch -60V -170mA SOT-23-3 | +/- 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 170 mA | 5.8 Ohms | - 2 V | 1.5 nC | Enhancement | |||
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23,299
In-stock
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Infineon Technologies | MOSFET P-Ch -60V -170mA SOT-23-3 | +/- 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 170 mA | 5.8 Ohms | - 2 V | 1.5 nC | Enhancement | |||
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15,516
In-stock
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Infineon Technologies | MOSFET P-Ch -60V -170mA SOT-23-3 | +/- 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 170 mA | 5.8 Ohms | - 2 V | 1.5 nC | Enhancement | |||
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8,142
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 2.3A SOT-23-3 | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 2.3 A | 44 mOhms | 1.2 V | 1.5 nC | Enhancement | |||
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7,725
In-stock
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Infineon Technologies | MOSFET N-Ch 60V 200mA SOT-23-3 | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 200 mA | 5 Ohms | 1.4 V | 1.5 nC | ||||
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6,844
In-stock
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Infineon Technologies | MOSFET P-Ch -60V -170mA SOT-23-3 | +/- 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 170 mA | 5.8 Ohms | - 2 V | 1.5 nC | Enhancement | |||
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9,635
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 2.3A SOT-23-3 | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 2.3 A | 57 mOhms | 1.2 V | 1.5 nC | Enhancement | |||
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8,995
In-stock
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Infineon Technologies | MOSFET SMALL SIGNAL+P-CH | +/- 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 200 mA | 2.5 Ohms | 800 mV | 1.5 nC | Enhancement | |||
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14,983
In-stock
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Infineon Technologies | MOSFET P-Ch -60V -170mA SOT-23-3 | +/- 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 170 mA | 5.8 Ohms | - 2 V | 1.5 nC | Enhancement | |||
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9,737
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 2.3A SOT-23-3 | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 2.3 A | 57 mOhms | 1.2 V | 1.5 nC | Enhancement | |||
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VIEW | Infineon Technologies | MOSFET N-Ch 60V 200mA SOT-23-3 | +/- 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 200 mA | 2.5 Ohms | 800 mV | 1.5 nC | Enhancement | |||
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VIEW | Infineon Technologies | MOSFET SMALL SIGNAL+P-CH | +/- 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 200 mA | 2.5 Ohms | 800 mV | 1.5 nC | Enhancement | |||
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VIEW | Infineon Technologies | MOSFET N-Ch 60V 200mA SOT-23-3 | +/- 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 200 mA | 2.5 Ohms | 800 mV | 1.5 nC | Enhancement |
