- Vgs - Gate-Source Voltage :
- Mounting Style :
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Tradename :
- Applied Filters :
21 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
7,732
In-stock
|
IR / Infineon | MOSFET MOSFT PCh -12V -16A 7mOhm 91nC | 8 V | SMD/SMT | SO-8 | Reel | 1 Channel | Si | P-Channel | - 12 V | - 16 A | 7 mOhms | 91 nC | ||||||||
|
|
1,076
In-stock
|
IR / Infineon | MOSFET MOSFT 60V 370A 2.4mOhm 91nC Log Lvl | 16 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 60 V | 270 A | 2.8 mOhms | 91 nC | ||||||||
|
|
5,197
In-stock
|
IR / Infineon | MOSFET MOSFT PCh -12V -16A 7mOhm 91nC | SMD/SMT | SO-8 | + 150 C | Reel | 1 Channel | Si | P-Channel | - 12 V | - 16 A | 7 mOhms | - 0.9 V | 91 nC | |||||||
|
|
1,498
In-stock
|
Infineon Technologies | MOSFET 200V SINGLE N-CH 55mOhms 91nC | 30 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 44 A | 55 mOhms | 5.5 V | 91 nC | Enhancement | ||||
|
|
598
In-stock
|
STMicroelectronics | MOSFET POWER MOSFET | 25 V | Through Hole | TO-247-4 | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 52 A | 45 mOhms | 2 V | 91 nC | Enhancement | |||||
|
|
2,846
In-stock
|
IR / Infineon | MOSFET 40V, 195A, 1.9 mOhm 91 nC Qg, Logic Lvl | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 254 A | 2.4 mOhms | 1 V | 91 nC | Enhancement | StrongIRFET | |||
|
|
1,550
In-stock
|
IR / Infineon | MOSFET 40V, 195A, 1.9 mOhm 91 nC Qg, Logic Lvl | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 254 A | 2.4 mOhms | 1 V | 91 nC | Enhancement | StrongIRFET | |||
|
|
1,550
In-stock
|
onsemi | MOSFET NFET SO8FL 60V 235A 1.5MO | 20 V | SMD/SMT | SO-FL-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 235 A | 1.2 mOhms | 1.2 V | 91 nC | Enhancement | ||||
|
|
2,194
In-stock
|
Infineon Technologies | MOSFET SMALL SIGNAL+P-CH | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 70 A | 5 mOhms | - 2 V | 91 nC | Enhancement | ||||
|
|
2,484
In-stock
|
Infineon Technologies | MOSFET 1 P-CH -12V HEXFET 7mOhms 91nC | 8 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 12 V | - 16 A | 7 mOhms | 91 nC | Enhancement | |||||
|
|
343
In-stock
|
Infineon Technologies | MOSFET MOSFT 60V 270A 2.4mOhm 91nC Log Lvl | 16 V | Through Hole | TO-262-3 | Tube | Si | N-Channel | 60 V | 270 A | 2.8 mOhms | 91 nC | |||||||||
|
|
1,401
In-stock
|
Diodes Incorporated | MOSFET MOSFET BVDSS: | +/- 25 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 40 V | - 50 A | 14 mOhms | - 2.5 V | 91 nC | Enhancement | ||||
|
|
72
In-stock
|
STMicroelectronics | MOSFET POWER MOSFET | 25 V | Through Hole | TO-247-3 | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 52 A | 45 mOhms | 2 V | 91 nC | Enhancement | |||||
|
|
GET PRICE |
9,390
In-stock
|
Infineon Technologies | MOSFET N-Ch 40V 100A DPAK-2 OptiMOS-T2 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 100 A | 1.7 mOhms | 3 V | 91 nC | Enhancement | OptiMOS | ||
|
|
154
In-stock
|
Infineon Technologies | MOSFET 60V 270A 2.4 mOhm Auto Lgc Lvl MOSFET | SMD/SMT | TO-252-3 | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 270 A | 2.8 mOhms | 91 nC | ||||||||
|
|
625
In-stock
|
Infineon Technologies | MOSFET N-Ch 40V 90A D2PAK-2 OptiMOS-T2 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 90 A | 2.1 mOhms | 91 nC | OptiMOS | |||||
|
|
448
In-stock
|
Infineon Technologies | MOSFET CONSUMER | 20 V | Through Hole | TO-220FP-3 | - 40 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 16.7 A | 250 mOhms | 2.1 V | 91 nC | Enhancement | CoolMOS | |||
|
|
1,112
In-stock
|
Toshiba | MOSFET POWER MOSFET TRANSISTOR PD=170W | SMD/SMT | DSOP-Advance-8 | Reel | 1 Channel | Si | N-Channel | 60 V | 260 A | 1.29 mOhms | 91 nC | Enhancement | ||||||||
|
|
VIEW | Infineon Technologies | MOSFET 60V 270A 2.4 mOhm Auto Lgc Lvl MOSFET | SMD/SMT | TO-252-3 | + 175 C | Tube | Si | N-Channel | 60 V | 270 A | 1.9 mOhms | 91 nC | |||||||||
|
|
VIEW | Infineon Technologies | MOSFET 60V 270A 2.4 mOhm Auto Lgc Lvl MOSFET | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 270 A | 2.8 mOhms | 1 V to 2.5 V | 91 nC | Enhancement | ||||
|
|
VIEW | Toshiba | MOSFET N-Ch 30V FET 56A 70W 6400pF 91nC | SMD/SMT | SOP-Advance-8 | Reel | 1 Channel | Si | N-Channel | 30 V | 56 A | 2.3 mOhms | 91 nC |
