- Vgs - Gate-Source Voltage :
- Package / Case :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Applied Filters :
5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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2,623
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | +/- 8 V | SMD/SMT | SOT-23-3 | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 1.4 A | 87 mOhms | 400 mV | 4.8 nC | Enhancement | ||||
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5,099
In-stock
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Diodes Incorporated | MOSFET N-Ch Enh Mode FET 12V 3.2A 8Vgss | 8 V | SMD/SMT | X2-DFN1010-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 12 V | 3.2 A | 25 mOhms | 400 mV | 4.8 nC | Enhancement | |||
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2,720
In-stock
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Nexperia | MOSFET PMV230ENEA/TO-236AB/REEL 7" Q3 | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 1.5 A | 176 mOhms | 1.3 V | 4.8 nC | Enhancement | |||
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2,557
In-stock
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Toshiba | MOSFET Small Signal MOSFET | +/- 20 V | SMD/SMT | UDFN6B-6 | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 9 A | 26 mOhms | 1.3 V | 4.8 nC | Enhancement | ||||
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2,134
In-stock
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Fairchild Semiconductor | MOSFET 600V 0.9A 12Ohm N-Channel | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 900 mA | 11.5 Ohms | 2 V to 4 V | 4.8 nC | Enhancement |
