MOSFET - Kaimeite

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IMAGE	PART NO.	PRICE	QUANTITY		STOCK	MANUFACTURE	DESCRIPTION	Vgs - Gate-Source Voltage	Mounting Style	Package / Case	Minimum Operating Temperature	Maximum Operating Temperature	Packaging	Number of Channels	Technology	Transistor Polarity	Vds - Drain-Source Breakdown Voltage	Id - Continuous Drain Current	Rds On - Drain-Source Resistance	Vgs th - Gate-Source Threshold Voltage	Qg - Gate Charge	Channel Mode	Tradename
	IXFB30N120P	1+ $33.740 5+ $33.390 10+ $31.120 25+ $29.720		PDF RFQ	150 In-stock	IXYS	MOSFET 30 Amps 1200V 0.35 Rds	30 V	Through Hole	PLUS-264-3	- 55 C	+ 150 C	Tube	1 Channel	Si	N-Channel	1200 V	30 A	350 mOhms	6.5 V	310 nC	Enhancement	Polar, HiPerFET
	SQM200N04-1M8_GE3	1+ $2.920 10+ $2.340 100+ $2.140 250+ $1.930		PDF RFQ	770 In-stock	Siliconix / Vishay	MOSFET N-Chnl 40-V (D-S) AEC-Q101 Qualified	+/- 20 V	SMD/SMT	TO-263-7	- 55 C	+ 175 C		1 Channel	Si	N-Channel	40 V	200 A	0.0015 Ohms	2.5 V	310 nC	Enhancement	TrenchFET
	SQM120N04-1m7_GE3	800+ $1.420 2400+ $1.350 4800+ $1.240 9600+ $1.200	GET PRICE VIEW	PDF RFQ		Vishay Semiconductors	MOSFET 40V 120A 375W AEC-Q101 Qualified	+/- 20 V	SMD/SMT	TO-263-3	- 55 C	+ 175 C	Reel	1 Channel	Si	N-Channel	40 V	120 A	0.0014 Ohms	2.5 V	310 nC	Enhancement	TrenchFET

IXFB30N120P

IXFB30N120P

IXYS

MOSFET 30 Amps 1200V 0.35 Rds

Stock : 150

1+: $33.740

5+: $33.390

10+: $31.120

25+: $29.720

SQM200N04-1M8_GE3

SQM200N04-1M8_GE3

Siliconix / Vishay

MOSFET N-Chnl 40-V (D-S) AEC-Q101 Qualified

Stock : 770

1+: $2.920

10+: $2.340

100+: $2.140

250+: $1.930

SQM120N04-1m7_GE3

SQM120N04-1m7_GE3

Vishay Semiconductors

MOSFET 40V 120A 375W AEC-Q101 Qualified

Stock : 0

800+: $1.420

2400+: $1.350

4800+: $1.240

9600+: $1.200

GET PRICE

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