- Package / Case :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
2 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | |
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6,000
In-stock
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Toshiba | MOSFET P-Ch U-MOSVI FET ID -4A -20VDSS 630pF | 8 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 4 A | 150 mOhms | - 0.3 V to - 1 V | 10.4 nC | ||||
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4,930
In-stock
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Toshiba | MOSFET P-Ch U-MOS VI FET ID -3.4A -20V 630pF | 8 V | SMD/SMT | ES6-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 3.4 A | 154 mOhms | - 0.3 V to - 1 V | 10.4 nC |