- Package / Case :
- Number of Channels :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Applied Filters :
9 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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89
In-stock
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IXYS | MOSFET 4500V 200mA HV Power MOSFET | 20 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 4500 V | 200 mA | 750 Ohms | 4 V to 6.5 V | 10.4 nC | Enhancement | |||||
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3,626
In-stock
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onsemi | MOSFET PFET UDFN6 20V 5.6A 50MOH | 8 V | SMD/SMT | uDFN-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 20 V | - 5.6 A | 50 mOhms | 0.5 V | 10.4 nC | ||||||
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3,737
In-stock
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Diodes Incorporated | MOSFET 20V Dual N-Ch ENH 20V 25mOhm 4.5V 5.8A | 8 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 20 V, 20 V | 5.8 A, 5.8 A | 25 mOhms, 25 mOhms | 1.5 V | 10.4 nC | Enhancement | |||||
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310
In-stock
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Infineon Technologies | MOSFET 55V Logic Level 3.1A 65 mOhm Auto MOSFET | SMD/SMT | SOT-223-4 | + 150 C | Reel | Si | N-Channel | 55 V | 4.4 A | 65 mOhms | 10.4 nC | ||||||||||
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3,000
In-stock
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Diodes Incorporated | MOSFET 20V P-Ch Enh Mode 8Vgss 845pF 10.4nC | 8 V | SMD/SMT | TSOT-26-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 4.2 A | 80 mOhms | - 0.9 V | 10.4 nC | Enhancement | |||||
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6,000
In-stock
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Toshiba | MOSFET P-Ch U-MOSVI FET ID -4A -20VDSS 630pF | 8 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 4 A | 150 mOhms | - 0.3 V to - 1 V | 10.4 nC | ||||||
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4,930
In-stock
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Toshiba | MOSFET P-Ch U-MOS VI FET ID -3.4A -20V 630pF | 8 V | SMD/SMT | ES6-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 3.4 A | 154 mOhms | - 0.3 V to - 1 V | 10.4 nC | ||||||
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3,520
In-stock
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Infineon Technologies | MOSFET 55V 1 N-CH HEXFET 65mOhms 10.4nC | 16 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 55 V | 4.4 A | 100 mOhms | 10.4 nC | Enhancement | ||||||
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VIEW | Diodes Incorporated | MOSFET 20V P-Ch Enh Mode 8Vgss 845pF 10.4nC | 8 V | SMD/SMT | TSOT-26-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 4.2 A | 80 mOhms | - 0.9 V | 10.4 nC | Enhancement | PowerDI |