- Vgs - Gate-Source Voltage :
- Mounting Style :
- Package / Case :
- Maximum Operating Temperature :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Tradename :
- Applied Filters :
9 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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1,464
In-stock
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STMicroelectronics | MOSFET N-channel 30 V, 2 mOhm typ., 120 A, STripFET H6 Power M... | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | 1 Channel | Si | N-Channel | 30 V | 120 A | 2.15 mOhms | 1 V | 53 nC | Enhancement | ||||||
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2,460
In-stock
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Fairchild Semiconductor | MOSFET 100V NCh PowerTrench | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 25 A | 32 mOhms | 4 V | 53 nC | Enhancement | PowerTrench | ||||
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3,959
In-stock
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Fairchild Semiconductor | MOSFET 80V N Chan Shielded Gate Power Trench | SMD/SMT | Power-33-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 80 V | 48 A | 8.5 mOhms | 4 V | 53 nC | Power Clip | ||||||
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2,126
In-stock
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Fairchild Semiconductor | MOSFET P-Channel Power Trench Mosfet | SMD/SMT | Power-33-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 40 A | 13 mOhms | - 0.9 V | 53 nC | PowerTrench | ||||||
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2,600
In-stock
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Infineon Technologies | MOSFET 1 P-CH -40V HEXFET 41mOhms 53nC | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 40 V | - 6.2 A | 70 mOhms | 53 nC | Enhancement | ||||||
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2,080
In-stock
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Vishay Semiconductors | MOSFET 30V 15A 5W AEC-Q101 Qualified | +/- 20 V | SMD/SMT | SO-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 15 A | 0.009 Ohms | 1.5 V | 53 nC | Enhancement | TrenchFET | ||||
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30
In-stock
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IXYS | MOSFET 30 Amps 600V | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 30 A | 110 mOhms | 3 V | 53 nC | Enhancement | CoolMOS | ||||
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30,000
In-stock
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Texas instruments | MOSFET 30V, N-channel NexFET Pwr MOSFET | 20 V | SMD/SMT | VSON-Clip-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 60 A | 2.9 mOhms | 1.1 V | 53 nC | Enhancement | NexFET | ||||
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VIEW | Infineon Technologies | MOSFET N-Ch 60V 120A D2PAK-2 | 20 V | SMD/SMT | TO-263-3 | Reel | 1 Channel | Si | N-Channel | 60 V | 120 A | 2.9 mOhms | 2 V | 53 nC |