- Manufacture :
- Package / Case :
- Number of Channels :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Applied Filters :
3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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2,850
In-stock
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onsemi | MOSFET NCH+NCH 7A 30V 4V DR | 20 V | SMD/SMT | ECH-8 | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V | 7 A | 55 mOhms | 1.2 V | 11.8 nC | Enhancement | |||||
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2,510
In-stock
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Texas instruments | MOSFET 30V N Channel NexFET Power MOSFET | 10 V | SMD/SMT | VSONP-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 100 A | 4.2 mOhms | 1.1 V | 11.8 nC | NexFET | ||||
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14,820
In-stock
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Diodes Incorporated | MOSFET 30V P-Ch Enh Mode 50mOhm -10Vgs -4.3A | 25 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 4.3 A | 35 mOhms | - 1 V | 11.8 nC | Enhancement |
