- Maximum Operating Temperature :
- Number of Channels :
- Transistor Polarity :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Applied Filters :
19 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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26,510
In-stock
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Nexperia | MOSFET 60V N-channel Trench MOSFET | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 330 mA | 3.2 Ohms | 1.1 V | 1 nC | Enhancement | |||
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13,759
In-stock
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Infineon Technologies | MOSFET N-Ch 600V 21mA SOT-23-3 | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 21 mA | 310 Ohms | 1.4 V | 1 nC | Enhancement | |||
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2,732
In-stock
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Fairchild Semiconductor | MOSFET 30V Integrated NMOS and Shottky Diode | 5.5 V | SMD/SMT | WLCSP-4 | - 55 C | + 125 C | Reel | 1 Channel | Si | N-Channel | 30 V | 1.1 A | 462 mOhms | 0.7 V | 1 nC | ||||
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14,088
In-stock
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Infineon Technologies | MOSFET N-Ch 600V 21mA SOT-23-3 | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 21 mA | 310 Ohms | 1.4 V | 1 nC | Enhancement | |||
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4,787
In-stock
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Infineon Technologies | MOSFET MOSFT 30V 2.7A 100mOhm 1.0nC | 20 V | SMD/SMT | SOT-23-3 | Reel | Si | N-Channel | 30 V | 2.7 A | 154 mOhms | 1 nC | ||||||||
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9,186
In-stock
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onsemi | MOSFET PFET SOT23 60V 211MA 5OHM | +/- 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 196 mA | 1.6 Ohms | - 3 V | 1 nC | Enhancement | |||
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5,982
In-stock
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Infineon Technologies | MOSFET N-Ch 60V 230mA SOT-323-3 | +/- 20 V | SMD/SMT | SOT-323-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 230 mA | 2.3 Ohms | 800 mV | 1 nC | Enhancement | |||
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7,608
In-stock
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Infineon Technologies | MOSFET SMALL SIGNALN-CH | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 200 mA | 5 Ohms | 1.3 V | 1 nC | Enhancement | |||
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VIEW | Nexperia | MOSFET NX7002BKM/XQFN3/REEL 7" Q1/T1 | 20 V | SMD/SMT | DFN1006-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 350 mA | 2.2 Ohms | 1.1 V | 1 nC | Enhancement | |||
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4,783
In-stock
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Infineon Technologies | MOSFET N-Ch 60V 230mA SOT-323-3 | +/- 20 V | SMD/SMT | SOT-323-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 230 mA | 2.3 Ohms | 800 mV | 1 nC | Enhancement | |||
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240
In-stock
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Nexperia | MOSFET NX7002BKMB/XQFN3/REEL 7" Q1/T1 | 20 V | SMD/SMT | DFN1006B-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 350 mA | 2.2 Ohms | 1.1 V | 1 nC | Enhancement | |||
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10,000
In-stock
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Toshiba | MOSFET Small Low ON Resistane MOSFETs | 8 V | SMD/SMT | CST3-3 | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 800 mA | 186 mOhms | 400 mV | 1 nC | Enhancement | ||||
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4,172
In-stock
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Toshiba | MOSFET N-Ch U-MOSVI FET ID 0.8A 20VDSS 55pF | 8 V | SMD/SMT | SOT-416-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 8 A | 840 mOhms | 0.4 V to 1 V | 1 nC | ||||
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6,890
In-stock
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Toshiba | MOSFET Small-signal FET 0.8A 20V 0.84ohm | 8 V | SMD/SMT | SOT-723-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 800 mA | 186 mOhms | 400 mV | 1 nC | Enhancement | |||
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9,125
In-stock
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Toshiba | MOSFET Small-signal MOSFET ID: 1.4A, VDSS: 20V | 8 V | SMD/SMT | CST3-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 1.4 A | 840 mOhms | 400 mV | 1 nC | Enhancement | |||
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145
In-stock
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Toshiba | MOSFET UDFN6 S-MOS TRSTR Pd: 0.5W F: 1MHz | 3.6 V | SMD/SMT | uDFN-6 | Reel | 1 Channel | Si | N-Channel, SBD | 40 V | 2 A | 160 mOhms | 1 nC | |||||||
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53,970
In-stock
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Infineon Technologies | MOSFET N-Ch 60V 280mA SOT-323-3 | 20 V | SMD/SMT | SOT-323-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 280 mA | 3.5 Ohms | 1.4 V | 1 nC | Enhancement | |||
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20,000
In-stock
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Diodes Incorporated | MOSFET 20V N-Ch Enh FET Dual .25A .32W 389pF | 8 V | SMD/SMT | X2-DFN0606-3 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 20 V | 250 mA | 990 mOhms | 1 V | 1 nC | Enhancement | |||
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VIEW | Infineon Technologies | MOSFET N-Ch 60V 200mA SOT-23-3 | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 200 mA | 5 Ohms | 1 nC | Enhancement |
