MOSFET - Kaimeite

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4 products

IMAGE	PART NO.	PRICE	QUANTITY		STOCK	MANUFACTURE	DESCRIPTION	Vgs - Gate-Source Voltage	Mounting Style	Package / Case	Minimum Operating Temperature	Maximum Operating Temperature	Packaging	Number of Channels	Technology	Transistor Polarity	Vds - Drain-Source Breakdown Voltage	Id - Continuous Drain Current	Rds On - Drain-Source Resistance	Vgs th - Gate-Source Threshold Voltage	Qg - Gate Charge	Channel Mode	Tradename
	NVD5807NT4G	1+ $0.650 10+ $0.533 100+ $0.325 1000+ $0.251 2500+ $0.215		PDF RFQ	1,902 In-stock	onsemi	MOSFET POWER MOSFET	20 V	SMD/SMT	TO-252-3	- 55 C	+ 175 C	Reel	1 Channel	Si	N-Channel	40 V	23 A	20 mOhms		12.6 nC
	IXTY5N50P	1+ $1.480 10+ $1.250 100+ $1.000 500+ $0.876		PDF RFQ	76 In-stock	IXYS	MOSFET 5 Amps 500V 1.3 Ohms Rds	30 V	SMD/SMT	TO-252-3	- 55 C	+ 150 C	Tube	1 Channel	Si	N-Channel	500 V	4.8 A	1.4 Ohms	5.5 V	12.6 nC	Enhancement	PolarHV
	DMN1025UFDB-7	1+ $0.550 10+ $0.452 100+ $0.276 1000+ $0.213 3000+ $0.182		PDF RFQ	3,000 In-stock	Diodes Incorporated	MOSFET Dual N-Ch Enh FET 12V 10Vgs 1.7W	10 V	SMD/SMT	U-DFN2020-B-6	- 55 C	+ 150 C	Reel	2 Channel	Si	N-Channel	12 V, 12 V	6.9 A, 6.9 A	25 mOhms, 25 mOhms	1 V	12.6 nC	Enhancement
	IXTA5N50P	1+ $1.620 10+ $1.380 100+ $1.100 500+ $0.963	GET PRICE VIEW	PDF RFQ		IXYS	MOSFET 4.8 Amps 500V 1.4 Ohms Rds	30 V	SMD/SMT	TO-263-3	- 55 C	+ 150 C	Tube	1 Channel	Si	N-Channel	500 V	4.8 A	1.4 Ohms	5.5 V	12.6 nC	Enhancement	PolarHV

NVD5807NT4G

NVD5807NT4G

onsemi

MOSFET POWER MOSFET

Stock : 1,902

1+: $0.650

10+: $0.533

100+: $0.325

1000+: $0.251

2500+: $0.215

IXTY5N50P

IXTY5N50P

IXYS

MOSFET 5 Amps 500V 1.3 Ohms Rds

Stock : 76

1+: $1.480

10+: $1.250

100+: $1.000

500+: $0.876

DMN1025UFDB-7

DMN1025UFDB-7

Diodes Incorporated

MOSFET Dual N-Ch Enh FET 12V 10Vgs 1.7W

Stock : 3,000

1+: $0.550

10+: $0.452

100+: $0.276

1000+: $0.213

3000+: $0.182

IXTA5N50P

IXTA5N50P

IXYS

MOSFET 4.8 Amps 500V 1.4 Ohms Rds

Stock : 0

1+: $1.620

10+: $1.380

100+: $1.100

500+: $0.963

GET PRICE

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