- Manufacture :
- Vgs - Gate-Source Voltage :
- Mounting Style :
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- Rds On - Drain-Source Resistance :
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4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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10
In-stock
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IXYS | MOSFET N-Channel: Power MOSFET w/Fast Diode | 20 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 300 V | 94 A | 36 mOhms | 3 V | 102 nC | Enhancement | HyperFET | |||
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8
In-stock
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IXYS | MOSFET 600V 36A | 30 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 36 A | 190 mOhms | 5 V | 102 nC | Enhancement | PolarHV, HiPerFET | |||
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6,000
In-stock
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Siliconix / Vishay | MOSFET N-Channel 60V PowerPAK SO-8 | +/- 20 V | SMD/SMT | PowerPAK-SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 100 A | 0.0014 Ohms | 2 V | 102 nC | Enhancement | ||||
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800
In-stock
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Fairchild Semiconductor | MOSFET Hi Intg PWM contrlr Green-Mode | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 80 V | 171 A | 3.9 mOhms | 4.5 V | 102 nC | Enhancement |
