- Vgs - Gate-Source Voltage :
- Package / Case :
- Maximum Operating Temperature :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Applied Filters :
6 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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11,930
In-stock
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Siliconix / Vishay | MOSFET N Ch 100Vds 20Vgs AEC-Q101 Qualified | +/- 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 1.6 A | 0.24 Ohms | 2.5 V | 3.4 nC | Enhancement | ||||
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44,430
In-stock
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Infineon Technologies | MOSFET MOSFT P-Ch -0.61A 600mOhm 3.4nC LogLvl | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 760 mA | 600 mOhms | - 1 V | 3.4 nC | |||||
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7,072
In-stock
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Infineon Technologies | MOSFET MOSFT P-Ch -0.61A 600mOhm 3.4nC LogLvl | 20 V | SMD/SMT | SOT-23-3 | Reel | 1 Channel | Si | P-Channel | - 30 V | - 760 mA | 1 Ohms | 3.4 nC | ||||||||
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2,998
In-stock
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Toshiba | MOSFET Small-signal MOSFET ID -2A, VDSS -30V | - 25 V to + 20 V | SMD/SMT | SOT-346-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 2 A | 125 mOhms | - 2.2 V | 3.4 nC | Enhancement | ||||
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1,141
In-stock
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Texas instruments | MOSFET PCh NexFET Power MOSFET | - 6 V | SMD/SMT | DSBGA-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 3.2 A | 33 mOhms | - 800 mV | 3.4 nC | NexFET | ||||
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5,900
In-stock
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Diodes Incorporated | MOSFET MOSFET BVDSS: 8V-24V | +/- 12 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 2.4 A | 136 mOhms | - 1 V | 3.4 nC | Enhancement |
