- Vgs - Gate-Source Voltage :
- Mounting Style :
- Maximum Operating Temperature :
- Number of Channels :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Applied Filters :
43 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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6,837
In-stock
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Fairchild Semiconductor | MOSFET 60V N-Channel QFET | 25 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 2.8 A | 140 mOhms | Enhancement | ||||||
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6,791
In-stock
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Infineon Technologies | MOSFET 55V 1 N-CH HEXFET 140mOhms 9.5nC | 16 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 55 V | 2 A | 140 mOhms | 2 V | 9.5 nC | Enhancement | ||||
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GET PRICE |
46,790
In-stock
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Fairchild Semiconductor | MOSFET 200V N-Ch adv QFET V2 Series | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 200 V | 15 A | 140 mOhms | Enhancement | |||||
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885
In-stock
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Fairchild Semiconductor | MOSFET 600V N-Channel SupreMOS | 30 V | Through Hole | TO-3PN-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 22 A | 140 mOhms | Enhancement | SupreMOS | |||||
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511
In-stock
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IXYS | MOSFET 500V 44A | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 44 A | 140 mOhms | Enhancement | HyperFET | |||||
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864
In-stock
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Infineon Technologies | MOSFET N-Ch 600V 23.8A TO220-3 CoolMOS C6 | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 23.8 A | 140 mOhms | 2.5 V | 75 nC | Enhancement | CoolMOS | |||
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2,406
In-stock
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Infineon Technologies | MOSFET P-Ch -100V 15A DPAK-2 | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 100 V | - 15 A | 140 mOhms | - 2 V | 62 nC | Enhancement | SIPMOS | |||
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113
In-stock
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IXYS | MOSFET 60 Amps 800V 0.14 Rds | 30 V | Through Hole | PLUS-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 60 A | 140 mOhms | 5 V | 250 nC | Enhancement | PolarHV, HiPerFET | |||
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988
In-stock
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Infineon Technologies | MOSFET N-Ch 650V 23.8A D2PAK-2 CoolMOS C6 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 23.8 A | 140 mOhms | 2.5 V | 75 nC | Enhancement | CoolMOS | |||
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15,853
In-stock
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Nexperia | MOSFET N Channel Mosfet SOT 23 | 8 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 1.05 A | 140 mOhms | Enhancement | ||||||
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1,606
In-stock
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Fairchild Semiconductor | MOSFET 200V N-Channel | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 200 V | 18 A | 140 mOhms | Enhancement | UniFET | |||||
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904
In-stock
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Fairchild Semiconductor | MOSFET 200V, 18A, 140mOhm UniFET FRFET MOSFET | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 200 V | 18 A | 140 mOhms | 5 V | 20 nC | Enhancement | UniFET | |||
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309
In-stock
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Fairchild Semiconductor | MOSFET 600V N-Channel SupreMOS | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 22 A | 140 mOhms | Enhancement | SupreMOS | |||||
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499
In-stock
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Fairchild Semiconductor | MOSFET 600V N-Channel SupreMOS | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 22 A | 140 mOhms | Enhancement | SupreMOS | |||||
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46
In-stock
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IXYS | MOSFET DIODE Id54 BVdass800 | 30 V | Chassis Mount | SOT-227-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 53 A | 140 mOhms | Enhancement | HyperFET | |||||
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4,710
In-stock
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Diodes Incorporated | MOSFET 100V N-CH MOSFET 100V 12A | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 12 A | 140 mOhms | 2 V | 9.7 nC | Enhancement | ||||
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4,026
In-stock
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Infineon Technologies | MOSFET DUAL -20V P-CH 12 VGS MAX | 12 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 2 Channel | Si | P-Channel | - 20 V | - 4.3 A | 140 mOhms | 14.7 nC | Enhancement | |||||
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51,710
In-stock
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Infineon Technologies | MOSFET N-Ch 500V 23A TO247-3 CoolMOS CP | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 23 A | 140 mOhms | Enhancement | CoolMOS | |||||
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3,510
In-stock
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Infineon Technologies | MOSFET N-Ch 600V 23.8A TO247-3 CoolMOS C6 | +/- 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 23.8 A | 140 mOhms | 2.5 V | 75 nC | Enhancement | CoolMOS | |||
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1,248
In-stock
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Infineon Technologies | MOSFET P-Ch -100V 15A DPAK-2 | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 100 V | - 15 A | 140 mOhms | - 2 V | 62 nC | Enhancement | ||||
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8,223
In-stock
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Diodes Incorporated | MOSFET 31V to 99V N-Ch FET 60Vds 20Vgs 2.3A | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 2.3 A | 140 mOhms | 3 V | 8.6 nC | Enhancement | ||||
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1,537
In-stock
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Fairchild Semiconductor | MOSFET 60V N-Ch QFET | 25 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 10 A | 140 mOhms | Enhancement | ||||||
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140
In-stock
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Fairchild Semiconductor | MOSFET 400V N-Channel QFET | 30 V | Through Hole | TO-3PN-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 400 V | 30 A | 140 mOhms | Enhancement | QFET | |||||
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3,475
In-stock
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Diodes Incorporated | MOSFET MOSFET BVDSS: 8V-24V 8V-24V SOT323 T&R 3K | 12 V | SMD/SMT | SOT-323-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 3.1 A | 140 mOhms | 1 V | 5.4 nC | Enhancement | ||||
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2,154
In-stock
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Diodes Incorporated | MOSFET 60V P-CH MOSFET | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 14 A | 140 mOhms | -2.7 V | 8.1 nC | Enhancement | ||||
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15
In-stock
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IXYS | MOSFET 600V 48A | 30 V | Chassis Mount | SOT-227-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 40 A | 140 mOhms | Enhancement | HyperFET | |||||
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112
In-stock
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IXYS | MOSFET 500V 44A | 30 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 44 A | 140 mOhms | Enhancement | HyperFET | |||||
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88
In-stock
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Infineon Technologies | MOSFET N-Ch 600V 23.8A TO220-3 CoolMOS C6 | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 23.8 A | 140 mOhms | 2.5 V | 75 nC | Enhancement | CoolMOS | |||
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91
In-stock
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IXYS | MOSFET 500V 44A | 30 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 44 A | 140 mOhms | Enhancement | HyperFET | |||||
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280
In-stock
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Infineon Technologies | MOSFET N-Ch 600V 23.8A TO247-3 CoolMOS C6 | +/- 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 23.8 A | 140 mOhms | 2.5 V | 75 nC | Enhancement | CoolMOS |
