MOSFET - Kaimeite

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IMAGE	PART NO.	PRICE	QUANTITY		STOCK	MANUFACTURE	DESCRIPTION	Vgs - Gate-Source Voltage	Mounting Style	Package / Case	Minimum Operating Temperature	Maximum Operating Temperature	Packaging	Number of Channels	Technology	Transistor Polarity	Vds - Drain-Source Breakdown Voltage	Id - Continuous Drain Current	Rds On - Drain-Source Resistance	Vgs th - Gate-Source Threshold Voltage	Qg - Gate Charge	Channel Mode	Tradename
	NTD6416ANLT4G	1+ $0.920 10+ $0.782 100+ $0.601 500+ $0.531 2500+ $0.372		PDF RFQ	4,133 In-stock	onsemi	MOSFET NFET DPAK 100V 17A 106MO	20 V	SMD/SMT	TO-252-3	- 55 C	+ 175 C	Reel	1 Channel	Si	N-Channel	100 V	19 A	74 mOhms		25 nC	Enhancement
	BSZ900N15NS3 G	1+ $0.990 10+ $0.841 100+ $0.646 500+ $0.571 5000+ $0.400		PDF RFQ	7,129 In-stock	Infineon Technologies	MOSFET N-Ch 150V 13A TSDSON-8 OptiMOS 3	20 V	SMD/SMT	TSDSON-8	- 55 C	+ 150 C	Reel	1 Channel	Si	N-Channel	150 V	13 A	74 mOhms	2 V	7 nC	Enhancement	OptiMOS
	BSZ900N15NS3GATMA1	1+ $0.990 10+ $0.841 100+ $0.646 500+ $0.571 5000+ $0.400		PDF RFQ	4,919 In-stock	Infineon Technologies	MOSFET N-Ch 150V 13A TSDSON-8 OptiMOS 3	20 V	SMD/SMT	TSDSON-8	- 55 C	+ 150 C	Reel	1 Channel	Si	N-Channel	150 V	13 A	74 mOhms	2 V	7 nC	Enhancement	OptiMOS

NTD6416ANLT4G

NTD6416ANLT4G

onsemi

MOSFET NFET DPAK 100V 17A 106MO

Stock : 4,133

1+: $0.920

10+: $0.782

100+: $0.601

500+: $0.531

2500+: $0.372

BSZ900N15NS3 G

BSZ900N15NS3 G

Infineon Technologies

MOSFET N-Ch 150V 13A TSDSON-8 OptiMOS 3

Stock : 7,129

1+: $0.990

10+: $0.841

100+: $0.646

500+: $0.571

5000+: $0.400

BSZ900N15NS3GATMA1

BSZ900N15NS3GATMA1

Infineon Technologies

MOSFET N-Ch 150V 13A TSDSON-8 OptiMOS 3

Stock : 4,919

1+: $0.990

10+: $0.841

100+: $0.646

500+: $0.571

5000+: $0.400

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