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- Package / Case :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
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4 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Qg - Gate Charge | Channel Mode | |
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1,178
In-stock
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IXYS | MOSFET 8mAmps 1000V | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 800 mA | 21 Ohms | 14.6 nC | Depletion | ||||
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180
In-stock
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IXYS | MOSFET 0.1 Amps 1000V 110 Rds | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 100 mA | 80 Ohms | Depletion | |||||
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41
In-stock
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IXYS | MOSFET | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 10 A | 1.5 Ohms | 200 nC | Depletion | ||||
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30
In-stock
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IXYS | MOSFET D2 Depletion Mode Power MOSFETs | Through Hole | TO-268-3 | Tube | 1 Channel | Si | N-Channel | 1000 V | 10 A | 1.5 Ohms | Depletion |