- Mounting Style :
- Maximum Operating Temperature :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Applied Filters :
5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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2,033
In-stock
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IXYS | MOSFET D2 Depletion Mode Power MOSFETs | 20 V | Through Hole | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 200 V | 16 A | 73 mOhms | 208 nC | Depletion | ||||
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135
In-stock
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IXYS | MOSFET D2 Depletion Mode Power MOSFETs | 20 V | SMD/SMT | TO-268-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 16 A | 64 mOhms | 225 nC | Depletion | ||||
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30
In-stock
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IXYS | MOSFET D2 Depletion Mode Power MOSFETs | Through Hole | TO-268-3 | Tube | 1 Channel | Si | N-Channel | 1000 V | 10 A | 1.5 Ohms | Depletion | ||||||||
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86
In-stock
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IXYS | MOSFET D2 Depletion Mode Power MOSFETs | 20 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 16 A | 300 mOhms | - 2 V | 199 nC | Depletion | |||
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3
In-stock
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IXYS | MOSFET 20 Amps 500V 0.33 Rds | 30 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 20 A | 330 mOhms | - 3.5 V | 78.5 nC | Depletion |
