- Vgs - Gate-Source Voltage :
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Number of Channels :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
-
- 1.7 A (2)
- 1.8 A (2)
- 1.9 A (1)
- 10 A (1)
- 10.1 A (1)
- 10.6 A (8)
- 10.9 A (1)
- 11 A (9)
- 11.3 A (2)
- 11.4 A (4)
- 11.6 A (1)
- 12 A (4)
- 12.5 A (1)
- 13 A (5)
- 13.8 A (5)
- 14 A (1)
- 14.1 A (2)
- 15 A (4)
- 15.1 A (1)
- 16 A (4)
- 16.1 A (4)
- 16.4 A (1)
- 17 A (4)
- 17.5 A (4)
- 18 A (2)
- 18.1 A (1)
- 19.2 A (2)
- 2 A (1)
- 2.3 A (1)
- 2.4 A (2)
- 2.6 A (2)
- 2.8 A (1)
- 20 A (1)
- 20 A, 20 A (2)
- 20.2 A (5)
- 20.7 A (1)
- 21 A (5)
- 21.3 A (2)
- 22.4 A (4)
- 23 A (2)
- 23.8 A (2)
- 24 A (3)
- 25 A (2)
- 27 A (1)
- 28 A (2)
- 3 A (2)
- 3.1 A (2)
- 3.2 A (4)
- 3.7 A (1)
- 3.9 A (2)
- 30 A (1)
- 31 A (4)
- 31.2 A (4)
- 33 A (2)
- 34 A (1)
- 37.9 A (1)
- 38 A (2)
- 4 A (3)
- 4.2 A (1)
- 4.3 A (1)
- 4.4 A (3)
- 4.5 A (6)
- 4.8 A (1)
- 46 A (2)
- 5 A (2)
- 5.1 A (1)
- 5.3 A (1)
- 5.4 A (1)
- 5.6 A (2)
- 5.7 A (2)
- 5.8 A (1)
- 6 A (7)
- 6.1 A (3)
- 6.2 A (1)
- 6.6 A (3)
- 6.7 A (2)
- 6.8 A (3)
- 69 A (1)
- 7 A (2)
- 7.1 A (1)
- 7.3 A (9)
- 7.6 A (3)
- 72 A (1)
- 8.1 A (1)
- 8.3 A (1)
- 8.5 A (1)
- 8.7 A (2)
- 84 A (1)
- 9 A (5)
- 9.1 A (1)
- 9.9 A (1)
- Rds On - Drain-Source Resistance :
-
- 1 Ohms (2)
- 1.1 Ohms (2)
- 1.15 Ohms (1)
- 1.2 Ohms (1)
- 1.26 Ohms (5)
- 1.4 Ohms (2)
- 1.5 Ohms (3)
- 1.52 Ohms (1)
- 1.8 Ohms (1)
- 1.87 Ohms (1)
- 10.1 mOhms, 10.1 mOhms (1)
- 108 mOhms (1)
- 110 mOhms (2)
- 111 mOhms (2)
- 115 mOhms (2)
- 125 mOhms (1)
- 130 mOhms (2)
- 135 mOhms (2)
- 140 mOhms (2)
- 149 mOhms (2)
- 150 mOhms (3)
- 162 mOhms (2)
- 168 mOhms (4)
- 170 mOhms (2)
- 171 mOhms (4)
- 173 mOhms (2)
- 180 mOhms (4)
- 189 mOhms (2)
- 190 mOhms (5)
- 199 mOhms (4)
- 2.1 Ohms (1)
- 2.22 Ohms (1)
- 2.34 Ohms (1)
- 2.4 Ohms (1)
- 2.7 Ohms (1)
- 2.8 Ohms (1)
- 20 mOhms, 20 mOhms (1)
- 220 mOhms (1)
- 225 mOhms (1)
- 228 mOhms (1)
- 230 mOhms (5)
- 250 mOhms (8)
- 270 mOhms (4)
- 280 mOhms (8)
- 299 mOhms (2)
- 3 Ohms (2)
- 3.28 Ohms (1)
- 3.3 Ohms (1)
- 3.51 Ohms (3)
- 300 mOhms (1)
- 33 mOhms (1)
- 340 mOhms (7)
- 350 mOhms (3)
- 360 mOhms (3)
- 380 mOhms (5)
- 385 mOhms (2)
- 399 mOhms (1)
- 4.68 Ohms (1)
- 4.91 Ohms (1)
- 40 mOhms (2)
- 420 mOhms (2)
- 424 mOhms (1)
- 445 mOhms (1)
- 450 mOhms (1)
- 460 mOhms (2)
- 490 mOhms (1)
- 500 mOhms (1)
- 520 mOhms (3)
- 540 mOhms (8)
- 58 mOhms (2)
- 590 mOhms (1)
- 594 mOhms (6)
- 600 mOhms (5)
- 600 Ohms (1)
- 62 mOhms (2)
- 650 mOhms (2)
- 660 mOhms (1)
- 680 mOhms (2)
- 7.02 Ohms (1)
- 7.96 Ohms (1)
- 720 mOhms (1)
- 725 mOhms (1)
- 740 mOhms (1)
- 780 mOhms (1)
- 80 mOhms (1)
- 800 mOhms (2)
- 84 mOhms (2)
- 855 mOhms (3)
- 860 mOhms (4)
- 88 mOhms (2)
- 89 mOhms (2)
- 90 mOhms (4)
- 950 mOhms (6)
- 99 mOhms (5)
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
-
- 10 nC (1)
- 10.5 nC (8)
- 11 nC (1)
- 110 nC (1)
- 117 nC (2)
- 118 nC (4)
- 119 nC (1)
- 12 nC (2)
- 12.4 nC (2)
- 127 nC (2)
- 13 nC (6)
- 14.1 nC (1)
- 15 nC (3)
- 15.3 nC (2)
- 16 nC (1)
- 16.4 nC (1)
- 17 nC (1)
- 17.2 nC (2)
- 18.7 nC (2)
- 20 nC (8)
- 20.5 nC (4)
- 21 nC (2)
- 22 nC (5)
- 23 nC (14)
- 23.4 nC (1)
- 24.8 nC (2)
- 26 nC, 26 nC (1)
- 27 nC, 27 nC (1)
- 28 nC (2)
- 29 nC (4)
- 31 nC (4)
- 31.5 nC (1)
- 32 nC (5)
- 32.6 nC (1)
- 35 nC (6)
- 37 nC (3)
- 39 nC (5)
- 4.3 nC (2)
- 4.6 nC (2)
- 4.7 nC (1)
- 41 nC (6)
- 43 nC (4)
- 44 nC (4)
- 45 nC (11)
- 52 nC (2)
- 6 nC (1)
- 6.7 nC (3)
- 6.8 nC (1)
- 63 nC (2)
- 64 nC (6)
- 68 nC (4)
- 70 nC (2)
- 73 nC (2)
- 75 nC (2)
- 8.2 nC (2)
- 80 nC (4)
- 86 nC (4)
- 9.4 nC (4)
- 93 nC (2)
- 94 nC (2)
- 96 nC (1)
- Applied Filters :
353 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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945
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Infineon Technologies | MOSFET | SOT-223-4 | Reel | Si | CoolMOS | |||||||||||||||
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5,435
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Infineon Technologies | MOSFET N-Ch 600V 10.6A DPAK-2 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 10.6 A | 340 mOhms | 2.5 V | 32 nC | Enhancement | CoolMOS | |||
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2,012
In-stock
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Infineon Technologies | MOSFET N-Ch 600V 10.6A D2PAK-2 CoolMOS C6 | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 10.6 A | 340 mOhms | 3.5 V | 32 nC | CoolMOS | ||||
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26,110
In-stock
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Infineon Technologies | MOSFET N-Ch 600V 20.2A D2PAK-2 CoolMOS C6 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 20.2 A | 170 mOhms | 2.5 V | 63 nC | Enhancement | CoolMOS | |||
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27,370
In-stock
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Infineon Technologies | MOSFET N-Ch 800V 17A D2PAK-2 CoolMOS C3 | +/- 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 800 V | 17 A | 250 mOhms | 2.1 V | 117 nC | Enhancement | CoolMOS | |||
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769
In-stock
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Infineon Technologies | MOSFET N-Ch 650V 20.7A D2PAK-2 CoolMOS C3 | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 20.7 A | 190 mOhms | Enhancement | CoolMOS | |||||
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508
In-stock
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Infineon Technologies | MOSFET N-Ch 650V 38A D2PAK-2 CoolMOS C6 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 37.9 A | 99 mOhms | 119 nC | CoolMOS | |||||
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1,243
In-stock
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Infineon Technologies | MOSFET N-Ch 650V 31A D2PAK-2 CoolMOS CP | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 31 A | 90 mOhms | 2.5 V | 80 nC | Enhancement | CoolMOS | |||
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1,063
In-stock
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Infineon Technologies | MOSFET N-Ch 700V 31.2A D2PAK-2 CoolMOS CFD2 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 31.2 A | 99 mOhms | 3.5 V | 118 nC | Enhancement | CoolMOS | |||
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771
In-stock
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Infineon Technologies | MOSFET N-Ch 900V 15A D2PAK-2 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 900 V | 15 A | 280 mOhms | 2.5 V | 94 nC | Enhancement | CoolMOS | |||
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4,073
In-stock
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Infineon Technologies | MOSFET LOW POWER_LEGACY | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 800 V | 2 A | 2.4 Ohms | 2.1 V | 16 nC | Enhancement | CoolMOS | |||
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3,068
In-stock
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Infineon Technologies | MOSFET N-Ch 600V 16.4A ThinPAK-4 CoolMOS CP | SMD/SMT | ThinPAK-5 | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 16.4 A | 199 mOhms | 3.5 V | 32 nC | CoolMOS | |||||
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545
In-stock
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Infineon Technologies | MOSFET N-Ch 650V 46A D2PAK-2 CoolMOS C7 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 46 A | 40 mOhms | 3 V | 93 nC | Enhancement | CoolMOS | |||
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5,886
In-stock
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Infineon Technologies | MOSFET N-Ch 600V 7.3A D2PAK-2 CoolMOS C3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 7.3 A | 600 mOhms | Enhancement | CoolMOS | |||||
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3,603
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Infineon Technologies | MOSFET N-Ch 200V 11.3A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 200 V | 11.3 A | 108 mOhms | CoolMOS | ||||||
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1,304
In-stock
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Infineon Technologies | MOSFET HIGH POWER BEST IN CLASS | 20 V | SMD/SMT | VSON-4 | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 28 A | 62 mOhms | 3 V | 64 nC | Enhancement | CoolMOS | |||
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2,000
In-stock
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Infineon Technologies | MOSFET N-Ch 650V 17.5A D2PAK-2 CoolMOS CFD2 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 17.5 A | 171 mOhms | 3.5 V | 68 nC | Enhancement | CoolMOS | |||
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4,634
In-stock
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Infineon Technologies | MOSFET N-Ch 600V 11.3A ThinPAK 5x6 | 30 V | SMD/SMT | ThinPAK-56-8 | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 11.3 A | 360 mOhms | 4 V | 22 nC | CoolMOS | ||||
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800
In-stock
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Infineon Technologies | MOSFET N-Ch 600V 31A D2PAK-2 CoolMOS CPA | 20 V | SMD/SMT | TO-263-3 | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 31 A | 90 mOhms | 2.5 V | 80 nC | Enhancement | CoolMOS | |||
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GET PRICE |
27,700
In-stock
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Infineon Technologies | MOSFET LOW POWER_LEGACY | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 800 V | 6 A | 780 mOhms | 2.1 V | 41 nC | Enhancement | CoolMOS | ||
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1,055
In-stock
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Infineon Technologies | MOSFET N-Ch 650V 16A D2PAK-2 CoolMOS CP | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 16 A | 180 mOhms | 2.5 V | 43 nC | Enhancement | CoolMOS | |||
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707
In-stock
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Infineon Technologies | MOSFET N-Ch 650V 46A D2PAK-2 CoolMOS C7 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 46 A | 40 mOhms | 3 V | 93 nC | Enhancement | CoolMOS | |||
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569
In-stock
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Infineon Technologies | MOSFET N-Ch 650V 31A D2PAK-2 CoolMOS CP | 20 V | SMD/SMT | TO-263-3 | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 31 A | 90 mOhms | 2.5 V | 80 nC | Enhancement | CoolMOS | |||
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2,163
In-stock
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Infineon Technologies | MOSFET N-Ch 650V 9A ThinPAK-4 CoolMOS CP | VSON-4 | Reel | 1 Channel | Si | N-Channel | 600 V | 27 A | 385 mOhms | CoolMOS | ||||||||||
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41,780
In-stock
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Infineon Technologies | MOSFET N-Ch 600V 20.2A DPAK-2 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 7.3 A | 540 mOhms | 2.5 V | 20.5 nC | Enhancement | CoolMOS | |||
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1,030
In-stock
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Infineon Technologies | MOSFET N-Ch 700V 49A D2PAK-2 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 13 A | 168 mOhms | 3 V | 23 nC | Enhancement | CoolMOS | |||
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10,630
In-stock
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Infineon Technologies | MOSFET N-Ch 650V 99.6A D2PAK-2 | 20 V | SMD/SMT | TO-263-3 | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 31.2 A | 99 mOhms | 3.5 V | 118 nC | Enhancement | CoolMOS | |||
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2,952
In-stock
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Infineon Technologies | MOSFET N-Ch 900V 5.1A DPAK-2 | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 900 V | 5.1 A | 1.2 Ohms | 3 V | 28 nC | CoolMOS | ||||
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2,436
In-stock
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Infineon Technologies | MOSFET N-Ch 800V 5.7A DPAK-2 | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 800 V | 5.7 A | 800 mOhms | 3 V | 31 nC | CoolMOS | ||||
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1,153
In-stock
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Infineon Technologies | MOSFET N-Ch 600V 25mA D2PAK-2 CoolMOS CP | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 25 A | 110 mOhms | 2.5 V | 70 nC | Enhancement | CoolMOS |
