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Technology :
Vds - Drain-Source Breakdown Voltage :
Rds On - Drain-Source Resistance :
4 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Channel Mode Tradename
IXFH220N06T3
1+
$4.450
10+
$3.780
100+
$3.280
250+
$3.110
RFQ
81
In-stock
IXYS MOSFET 60V/220A TrenchT3 20 V Through Hole TO-247-3 - 55 C + 175 C Tube 1 Channel SiC N-Channel 60 V 220 A 4 mOhms 2 V 136 nC Enhancement HiPerFET
IXFP220N06T3
1+
$3.050
10+
$2.590
100+
$2.250
250+
$2.130
RFQ
87
In-stock
IXYS MOSFET 60V/220A TrenchT3 20 V Through Hole TO-220-3 - 55 C + 175 C Tube 1 Channel SiC N-Channel 60 V 220 A 4 mOhms 2 V 136 nC Enhancement HiPerFET
IXFX220N17T2
1+
$10.420
10+
$9.420
25+
$8.980
100+
$7.800
RFQ
100
In-stock
IXYS MOSFET GigaMOS Trench T2 HiperFET Pwr MOSFET   Through Hole TO-247-3     Tube   Si N-Channel 170 V 220 A 6.3 mOhms       HiPerFET
IXFA220N06T3
1+
$3.180
10+
$2.700
100+
$2.350
250+
$2.230
RFQ
62
In-stock
IXYS MOSFET 60V/220A TrenchT3 20 V SMD/SMT TO-263-3 - 55 C + 175 C Tube 1 Channel SiC N-Channel 60 V 220 A 4 mOhms 2 V 136 nC Enhancement HiPerFET
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