- Vgs - Gate-Source Voltage :
- Mounting Style :
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Rds On - Drain-Source Resistance :
-
- 0.032 Ohms (2)
- 0.29 Ohms (1)
- 1.22 Ohms (1)
- 14.4 mOhms (1)
- 15 mOhms (1)
- 19 mOhms (1)
- 194 mOhms (4)
- 23 mOhms (3)
- 24 mOhms (1)
- 25 mOhms (1)
- 26 mOhms (1)
- 28 mOhms (1)
- 30 mOhms (2)
- 300 mOhms (2)
- 336 mOhms (1)
- 350 mOhms (1)
- 37 mOhms (1)
- 48 mOhms (1)
- 50 mOhms (1)
- 500 mOhms (2)
- 530 mOhms (2)
- 540 mOhms (1)
- 560 mOhms (2)
- 594 mOhms (2)
- 720 mOhms (1)
- 75 mOhms (1)
- 950 mOhms (1)
39 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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1,000
In-stock
|
STMicroelectronics | MOSFET | +/- 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 900 V | 7 A | 720 mOhms | 3 V | 17.7 nC | Enhancement | ||||
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2,965
In-stock
|
Siliconix / Vishay | MOSFET 60V Vds -/+20V Vgs AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TSOP-6 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 7 A | 0.032 Ohms | 1.5 V | 14 nC | Enhancement | TrenchFET | |||
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9,470
In-stock
|
Fairchild Semiconductor | MOSFET Common Drain N-Channel 2.5 V PowerTrench WL-CSP MOSF... | 12 V | SMD/SMT | WLCSP-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 24 V | 7 A | 23 mOhms | 0.9 V | 12 nC | Enhancement | PowerTrench | |||
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6,286
In-stock
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Fairchild Semiconductor | MOSFET 30V Integrated N-Ch PT MOSFET-Schtky Dio | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 7 A | 23 mOhms | Enhancement | PowerTrench | |||||
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4,579
In-stock
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Fairchild Semiconductor | MOSFET LOW VOLTAGE | 20 V | SMD/SMT | Power-33-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 220 V | 7 A | 336 mOhms | Enhancement | UltraFET | |||||
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4,203
In-stock
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Fairchild Semiconductor | MOSFET 100V N-Channel PowerTrench MOSFET | 20 V | SMD/SMT | Power-33-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 7 A | 24 mOhms | 1.6 V | 15.3 nC | PowerTrench | ||||
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39,190
In-stock
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Fairchild Semiconductor | MOSFET 100V N-Channel PowerTrench MOSFET | SMD/SMT | Power-56-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 7 A | 37 mOhms | PowerTrench | |||||||
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1,807
In-stock
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Fairchild Semiconductor | MOSFET 100V N-Channel PowerTrench MOSFET | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 7 A | 23 mOhms | 3.1 V | 6.7 nC | PowerTrench | ||||
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2,766
In-stock
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Fairchild Semiconductor | MOSFET Trans N-Ch 600V 7A 3-Pin 2+Tab | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 7 A | 530 mOhms | Enhancement | SuperFET | |||||
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7,730
In-stock
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Infineon Technologies | MOSFET N-Ch 200V 7A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 200 V | 7 A | 194 mOhms | 2 V | 5.6 nC | Enhancement | OptiMOS | |||
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3,450
In-stock
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Infineon Technologies | MOSFET N-Ch 200V 7A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 200 V | 7 A | 194 mOhms | 2 V | 5.6 nC | Enhancement | OptiMOS | |||
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3,983
In-stock
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Fairchild Semiconductor | MOSFET 20V N-Channel PowerTrench | 8 V | SMD/SMT | UMLP-6 | Reel | 1 Channel | Si | N-Channel | 20 V | 7 A | 19 mOhms | 0.7 V | 9.2 nC | PowerTrench | ||||||
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3,650
In-stock
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Diodes Incorporated | MOSFET 40V N-Chnl UMOS | 20 V | SMD/SMT | SOT-223-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 7 A | 75 mOhms | Enhancement | ||||||
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2,178
In-stock
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Fairchild Semiconductor | MOSFET SO-8 N-CH 60V | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 7 A | 28 mOhms | Enhancement | PowerTrench | |||||
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1,972
In-stock
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Fairchild Semiconductor | MOSFET N-CH/600V/7A SuperFET | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 7 A | 530 mOhms | Enhancement | ||||||
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891
In-stock
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Siliconix / Vishay | MOSFET N-Channel 250V AEC-Q101 Qualified | +/- 30 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 250 V | 7 A | 0.29 Ohms | 2.5 V | 29 nC | Enhancement | TrenchFET | |||
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907
In-stock
|
Fairchild Semiconductor | MOSFET 40V N-Channel PowerTrench MOSFET | SMD/SMT | Power-33-8 | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 7 A | 26 mOhms | 6.6 nC, 13.6 nC | ||||||||
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2,741
In-stock
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IR / Infineon | MOSFET MOSFT 30V 7A 30mOhm 18nC | 20 V | SMD/SMT | SO-8 | Reel | 1 Channel | Si | N-Channel | 30 V | 7 A | 50 mOhms | 18 nC | ||||||||
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1,540
In-stock
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Diodes Incorporated | MOSFET MOSFET BVDSS: 31V-40 PowerDI3333-8 T&R 2K | 20 V | SMD/SMT | PowerDI3333-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 7 A | 15 mOhms | 1 V | 17 nC | Enhancement | ||||
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3,000
In-stock
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Siliconix / Vishay | MOSFET N Ch 60Vds 20Vgs AEC-Q101 Qualified | 20 V | SMD/SMT | TSOP-6 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 7 A | 0.032 Ohms | 1.5 V | 12 nC | Enhancement | ||||
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86,000
In-stock
|
Toshiba | MOSFET N-Ch 7A 60W FET 600V 490pF 15nC | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 7 A | 500 mOhms | 2.7 V to 3.7 V | 15 nC | Enhancement | ||||
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1,865
In-stock
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Toshiba | MOSFET UMOSVIII 100V 48m max(VGS=10V) DPAK | 10 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 100 V | 7 A | 48 mOhms | |||||||||
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225
In-stock
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Toshiba | MOSFET N-Ch DTMOSIV 600 V 60W 490pF 15nC 7A | 30 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 7 A | 500 mOhms | 3.7 V | 15 nC | Enhancement | ||||
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3,000
In-stock
|
Toshiba | MOSFET WCSP6C S-MOS TRSTR Pd=0mW F=1MHz | 4.5 V | SMD/SMT | WCSP6C-6 | Reel | 1 Channel | Si | N-Channel | 12 V | 7 A | 14.4 mOhms | 5.4 nC | ||||||||
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3,189
In-stock
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STMicroelectronics | MOSFET MDmesh V N-Ch 650V 710V VDSS | 25 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 7 A | 560 mOhms | |||||||
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9,920
In-stock
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Infineon Technologies | MOSFET N-Ch 200V 7A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 200 V | 7 A | 194 mOhms | 2 V | 5.6 nC | Enhancement | ||||
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12,000
In-stock
|
onsemi | MOSFET 30V 7A N-Channel | 20 V | SMD/SMT | TSOP-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 7 A | 30 mOhms | Enhancement | ||||||
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2,500
In-stock
|
STMicroelectronics | MOSFET N-Ch 650V 0.56 Ohm MDmesh M5 7A 710VDss | 25 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 7 A | 560 mOhms | |||||||
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VIEW | IR / Infineon | MOSFET Automotive MOSFET N ch 60V, 7A, 26mOhm | SMD/SMT | SO-8 | Reel | 1 Channel | Si | N-Channel | 60 V | 7 A | 30 mOhms | ||||||||||
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86,000
In-stock
|
Toshiba | MOSFET DTMOSIV 600V 600mOhm DPKw/Hgh Speed Diode | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 7 A | 540 mOhms | 4.5 V | 16 nC | Enhancement |
