- Manufacture :
- Mounting Style :
- Package / Case :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
4 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
988
In-stock
|
Fairchild Semiconductor | MOSFET 500V N-CHANNEL | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 7 A | 760 mOhms | Enhancement | UniFET | ||||||
|
934
In-stock
|
Fairchild Semiconductor | MOSFET 500V N-Channel UniFET-II | 25 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 7 A | 850 mOhms | 3 V to 5 V | 14 nC | UniFET | |||||
|
387
In-stock
|
Toshiba | MOSFET N-Ch MOS 7A 500V 35W 600pF 1.22 | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 500 V | 7 A | 1 Ohms | 4.4 V | 12 nC | |||||||
|
VIEW | Toshiba | MOSFET N-Ch MOS 7A 500V 100W 600pF 1.22 | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 500 V | 7 A | 1.22 Ohms |