1 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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7,200
In-stock
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Toshiba | MOSFET N-Ch 120V 112A 168W UMOSVIII 4200pF 69nC | 20 V | Through Hole | TO-220-3 | 1 Channel | Si | N-Channel | 120 V | 112 A | 5.8 mOhms | 2 V to 4 V | 69 nC | Enhancement |
