- Manufacture :
- Package / Case :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Tradename :
6 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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7,464
In-stock
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STMicroelectronics | MOSFET N-Ch 400 Volt 5.4 A Zener SuperMESH | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 400 V | 5.4 A | 1 Ohms | Enhancement | ||||||
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206
In-stock
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Toshiba | MOSFET DTMOSIV 600V 900mOhm 5.4A 60W 380pF10.5nC | 30 V | Through Hole | TO-251-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 600 V | 5.4 A | 770 mOhms | 2.7 V to 3.7 V | 10.5 nC | DTMOSIV | |||||
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GET PRICE |
85,000
In-stock
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Toshiba | MOSFET N-Ch 9.7A 100W FET 600V 380pF 20nC | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 600 V | 5.4 A | 770 mOhms | 2.7 V to 3.7 V | 10.5 nC | Enhancement | ||||
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701
In-stock
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STMicroelectronics | MOSFET N-Ch, 400V-0.85ohms 5.4A | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 400 V | 5.4 A | 1 Ohms | 3.75 V | 19 nC | Enhancement | ||||
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VIEW | STMicroelectronics | MOSFET N-Ch 650 V 1.1 Ohm 5.4 A SuperMESH3 | 30 V | Through Hole | TO-281-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 5.4 A | 1.1 Ohms | 3.75 V | 33 nC | Enhancement | SuperMesh | |||
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VIEW | STMicroelectronics | MOSFET N-Ch 650V 1.1 Ohm 5.4A SuperMESH3 | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 5.4 A | 1.3 Ohms | 35 nC | Enhancement |
