- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
3 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Qg - Gate Charge | Channel Mode | |
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7,990
In-stock
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IR / Infineon | MOSFET MOSFT 100V 5.4A 39mOhm 37nC | 20 V | SMD/SMT | SO-8 | Reel | 1 Channel | Si | N-Channel | 100 V | 5.4 A | 39 mOhms | 37 nC | |||||||
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3,134
In-stock
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Diodes Incorporated | MOSFET MOSFET,N-CHANNEL 40V, 5.5A/- 7.2A | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 5.4 A | 34 mOhms | 4.9 nC | |||||
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919
In-stock
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Infineon Technologies | MOSFET 100V 1 N-CH HEXFET 39mOhms 37nC | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 100 V | 5.4 A | 39 mOhms | 37 nC | Enhancement |