- Mounting Style :
- Minimum Operating Temperature :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Channel Mode :
- Tradename :
- Applied Filters :
20 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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GET PRICE |
6,580
In-stock
|
Diodes Incorporated | MOSFET 100V N-Chnl UMOS | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 800 mA | 900 mOhms | Enhancement | |||||
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GET PRICE |
1,317
In-stock
|
IXYS | MOSFET N-CH MOSFETS 1000V 800MA | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 800 mA | 21 Ohms | ||||||
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GET PRICE |
1,178
In-stock
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IXYS | MOSFET 8mAmps 1000V | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 800 mA | 21 Ohms | 14.6 nC | Depletion | ||||
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GET PRICE |
45,000
In-stock
|
Infineon Technologies | MOSFET N-Ch 600V 800mA IPAK-3 CoolMOS C3 | 20 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 800 mA | 6 Ohms | Enhancement | CoolMOS | ||||
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GET PRICE |
665
In-stock
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Diodes Incorporated | MOSFET N-Chnl 100V | 20 V | SMD/SMT | SOT-223-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 800 mA | 1.8 Ohms | Enhancement | |||||
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GET PRICE |
4,800
In-stock
|
onsemi | MOSFET NFET DPAK 600V 0.4A 15OHM | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 800 mA | 12.2 Ohms | 3 V | 4.9 nC | Enhancement | |||
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GET PRICE |
2,878
In-stock
|
onsemi | MOSFET NFET DPAK 600V 1.5A 8.50H | 30 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 800 mA | 12.2 Ohms | 3 V | 4.9 nC | Enhancement | |||
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GET PRICE |
250
In-stock
|
IXYS | MOSFET N-CH MOSFETS (D2) 500V 800MA | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 800 mA | 4.6 Ohms | 12.7 nC | |||||
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GET PRICE |
441
In-stock
|
IXYS | MOSFET 0.8 Amps 1200V 25 Rds | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1200 V | 800 mA | 20.5 Ohms | 4.5 V | 14 nC | Enhancement | Polar | ||
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GET PRICE |
119
In-stock
|
IXYS | MOSFET N-CH MOSFETS 500V 800MA | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 800 mA | 4.6 Ohms | ||||||
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GET PRICE |
140
In-stock
|
IXYS | MOSFET N-CH MOSFETS 500V 800MA | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 800 mA | 4.6 Ohms | 12.7 nC | |||||
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GET PRICE |
82
In-stock
|
IXYS | MOSFET N-CH MOSFETS (D2) 1000V 800MA | SMD/SMT | TO-263-3 | Tube | 1 Channel | Si | N-Channel | 1000 V | 800 mA | 21 Ohms | |||||||||
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GET PRICE |
45
In-stock
|
IXYS | MOSFET 0.8 Amps 1000V 20 Rds | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 800 mA | 20 Ohms | Enhancement | |||||
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GET PRICE |
37
In-stock
|
IXYS | MOSFET 0.8 Amps 1000V 20 Rds | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 800 mA | 20 Ohms | Enhancement | |||||
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GET PRICE |
30
In-stock
|
IXYS | MOSFET 0.8 Amps 1000V 20 Rds | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 800 mA | 20 Ohms | Enhancement | |||||
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GET PRICE |
10,000
In-stock
|
Toshiba | MOSFET Small Low ON Resistane MOSFETs | 8 V | SMD/SMT | CST3-3 | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 800 mA | 186 mOhms | 400 mV | 1 nC | Enhancement | ||||
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GET PRICE |
6,890
In-stock
|
Toshiba | MOSFET Small-signal FET 0.8A 20V 0.84ohm | 8 V | SMD/SMT | SOT-723-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 800 mA | 186 mOhms | 400 mV | 1 nC | Enhancement | |||
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GET PRICE |
3,000
In-stock
|
Diodes Incorporated | MOSFET N-Channel | 20 V | SMD/SMT | SOT-23-3 | - 65 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 800 mA | 3 Ohms | Enhancement | |||||
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GET PRICE |
6,000
In-stock
|
Diodes Incorporated | MOSFET N-Channel | 20 V | SMD/SMT | SOT-323-3 | - 65 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 800 mA | 3 Ohms | Enhancement | |||||
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GET PRICE |
1,009
In-stock
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Infineon Technologies | MOSFET N-Ch 650V 800mA IPAK-3 CoolMOS C3 | 30 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Tube | 1 Channel | GaN | N-Channel | 650 V | 800 mA | 6 Ohms | Enhancement | CoolMOS |
