- Manufacture :
- Mounting Style :
- Package / Case :
- Qg - Gate Charge :
- Tradename :
6 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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232
In-stock
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IXYS | MOSFET 44 Amps 800V | 30 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 44 A | 190 mOhms | Enhancement | HyperFET | |||||
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52
In-stock
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IXYS | MOSFET 44 Amps 800V | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 44 A | 190 mOhms | 5 V | 198 nC | Enhancement | PolarHV, HiPerFET | |||
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30
In-stock
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IXYS | MOSFET Q3Class HiPerFET Pwr MOSFET 800V/44A | 30 V | Through Hole | TO-247-3 | Tube | 1 Channel | Si | N-Channel | 800 V | 44 A | 190 mOhms | 185 nC | HyperFET | |||||||
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10
In-stock
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IXYS | MOSFET Q3Class HiPerFET Pwr MOSFET 800V/44A | 30 V | Through Hole | TO-264-3 | Tube | 1 Channel | Si | N-Channel | 800 V | 44 A | 190 mOhms | 185 nC | HyperFET | |||||||
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4
In-stock
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IXYS | MOSFET 36 Amps 800V | 30 V | Chassis Mount | SOT-227-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 39 A | 190 mOhms | 5 V | 200 nC | Enhancement | PolarHV, HiPerFET | |||
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5
In-stock
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Microsemi | MOSFET Power FREDFET - MOS8 | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 800 V | 41 A | 190 mOhms | 2.5 V | 260 nC | Enhancement |
