- Mounting Style :
- Package / Case :
4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | |
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682
In-stock
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STMicroelectronics | MOSFET N-Ch 650V 0.168 Ohm 18A Mdmesh V | 25 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 650 V | 18 A | 190 mOhms | 4 V | 36 nC | |||||
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481
In-stock
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STMicroelectronics | MOSFET N-ch 650 V 0.168 Ohm 18 A MDmesh M5 | 650 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 650 V | 18 A | 190 mOhms | 4 V | 36 nC | |||||
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1,000
In-stock
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STMicroelectronics | MOSFET N-Ch 650V 18A MDmesh M5 0.19Ohm | 25 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 18 A | 190 mOhms | 4 V | 36 nC | |||
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496
In-stock
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STMicroelectronics | MOSFET N-Ch 650V 0.168 Ohm 18A Mdmesh M5 | 650 V | Through Hole | TO-247-3 | Tube | 1 Channel | Si | N-Channel | 650 V | 18 A | 190 mOhms | 4 V | 36 nC |
