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Vgs - Gate-Source Voltage :
Minimum Operating Temperature :
Maximum Operating Temperature :
Vds - Drain-Source Breakdown Voltage :
Id - Continuous Drain Current :
Vgs th - Gate-Source Threshold Voltage :
5 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Channel Mode Tradename
IRL40SC209
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RFQ
100
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Infineon Technologies MOSFET +/- 20 V SMD/SMT D2PAK-7 - 55 C + 175 C   1 Channel Si N-Channel 40 V 478 A 600 uOhms 1 V 267 nC Enhancement StrongIRFET
FDMS7650DC
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RFQ
1,172
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Fairchild Semiconductor MOSFET 30V N-Chnl Dual Cool Pwr Trench MOSFET 20 V SMD/SMT DualCool-56-8 - 55 C + 150 C Reel 1 Channel Si N-Channel 30 V 47 A 600 uOhms 1.9 V 147 nC   PowerTrench
BSB008NE2LX
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RFQ
5,056
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Infineon Technologies MOSFET N-Ch 25V 180A CanPAK-2 MX OptiMOS 20 V SMD/SMT WDSON-2-3 - 40 C + 150 C Reel 1 Channel Si N-Channel 25 V 180 A 600 uOhms 1.2 V 343 nC Enhancement  
BSB008NE2LXXUMA1
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RFQ
Infineon Technologies MOSFET N-Ch 25V 180A CanPAK-2 MX OptiMOS 20 V SMD/SMT WDSON-2-3 - 40 C + 150 C Reel 1 Channel Si N-Channel 25 V 180 A 600 uOhms 1.2 V 343 nC Enhancement OptiMOS
BSB008NE2LXXT
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RFQ
Infineon Technologies MOSFET N-Ch 25V 180A CanPAK-2 MX OptiMOS 20 V SMD/SMT WDSON-2-3 - 40 C + 150 C Reel 1 Channel Si N-Channel 25 V 180 A 600 uOhms 1.2 V 343 nC Enhancement OptiMOS
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